V ishay I ntertechn o l o g y, I nc . MOSFETs - Able to Withstand High Energy Pulses AND TEC I INNOVAT O L OGY SiHG47N60S-E3 N HN High-Voltage Power mosfet O 19 62-2012 600-V N-Channel MOSFETs Use Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses Key Benefits • • • • • 47 A, 600 V, RDS(on) max. = 70 mΩ at VGS = 10 V Low gate charge: Qg max. = 216 nC 100 % avalanche tested VDS= 650 V at TJ max. Compliant to RoHS directive 2002/95/EC APPLICATIONS • Inverter circuits • Motor controls • PWM full bridge topology Resources • Datasheet: SiHG47N60S - http://www.vishay.com/doc?91341 • For technical questions contact [email protected] One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0239-1112 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V ishay I ntertechn o l o g y, I nc . N AND TEC SiHG47N60S SiHG47N60S-E3 Vishay Siliconix www.vishay.com 19 O L OGY INNOVAT I HN High-Voltage Power mosfet O 62-2012 FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 216 • 100 % Avalanche Tested Qgs (nC) 39 • Ultra Low Gate Charge Qgd (nC) 57 • Ultra Low Ron Single COMPLIANT • Compliant to RoHS Directive 2002/95/EC D TO-247AC RoHS • Low Figure-of-Merit Ron x Qg 0.07 Qg max. (nC) Configuration APPLICATIONS • PFC Power Supply Stages • Hard Switching Topologies • Solar Inverters G • UPS G D S • Motor Control • Server Telecom S N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG47N60S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL VDS Drain-Source Voltage Gate-Source Voltage VGS Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C ID LIMIT UNIT 600 V ± 20 30 47 30 A IDM 140 Avalanche Energy (repetitive) EAR 0.42 Single Pulse Avalanche Energyb EAS 1800 Maximum Power Dissipation PD 417 W TJ, Tstg - 55 to + 150 °C Pulsed Drain Currenta Linear Derating Factor Revision 26-Sep-11 MOSFETs - Able to Withstand High Energy Pulses S Series Power MOSFET 3.3 Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dtd Soldering Recommendations (Peak Temperature)c for 10 s dV/dt 37 8.5 300 W/°C mJ V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 , IAS = 7 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S11-1882-Rev. E, 26-Sep-11 1 Document Number: 91341 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PRODUCT SHEET 2/2 VMN-PT0239-1112 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000