Product Sheet

V I S H AY I N T E R T E C H N O L O G Y, I N C .
POWER MOSFETs
E and EF Series High-Voltage
500 V, 600 V, and 650 V High-Performance
Superjunction MOSFETs
APPLICATIONS
KEY BENEFITS
• Optimal design
–– Low on-resistance (RDS(on))
–– Reduced switching losses
–– Ultra-low gate charge (Qg)
–– Simple gate drive circuitry
• 600 V EF Fast Body Diode
–– Increased robustness
–– Designed for soft switching topologies
•
•
•
•
•
•
Server and telecom power supplies
Lighting
Industrial
Renewable energy
Switch Mode Power Supplies
Computing and consumer
APPLICATION NOTES:
•
•
•
•
•
How 2 Turn on a MOSFET
Power MOSFET Basics: Understanding Superjunction Technology
How to Select the Right MOSFET for Power Factor Correction Applications
Zero-Voltage Switching Full-Bridge Converter: Operation, FOM, and Guidelines for
MOSFET Selection
Two-Switch Forward Converter: Operation, FOM, and MOSFET Selection Guide
RESOURCES
• E Series products: www.vishay.com/mosfets/e-series-high-voltage-standard/
• EF Series products: www.vishay.com/mosfets/ef-series-high-voltage/
• For technical questions, contact: [email protected]
A WORLD OF
SOLUTIONS
PRODUCT SHEET
1/3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND
THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VMN-PT0273-1605
www.vishay.com
V I S H AY I N T E R T E C H N O L O G Y, I N C .
POWER MOSFETs
E and EF Series High-Voltage
IPAK
(TO-251)
POWERPAK®
8X8
POWERPAK®
SO-8L
(Typ) (nC)
DPAK
(TO-252)
(Max) (Ω)
D2PAK
(TO-263)
VGS = 10 V
(A)
PACKAGES
TO-220
Qg
TO-220
FULLPAK
PRODUCT
RDS(on)
THIN-LEAD
TO-220
FULLPAK
(V)
ID
TO-247
V(BR)DSS
G
A
F
P
B
D
U
H
J
650 V
E Series
600 V
500 V
x=
PRODUCT SHEET
SiHx12N50E
11
0.380
25
SiHx15x50E
15
0.280
33
x
x
x
SiHx20x50E
19
0.184
46
x
x
x
x
SiHx25N50E
26
0.145
57
x
x
x
x
SiHx7N60E
7
0.600
20
SiHx8N60E
8
0.520
22
SiHx11N60E
11
0.364
26
SiHx12N60E
12
0.380
29
SiHx14N60E
13
0.309
32
SiHx14N60E
16
0.225
41
SiHx15N60E
15
0.280
39
SiHx18N60E
18
0.202
46
SiHx21N60E
20
0.176
55
SiHx22N60E
21
0.180
57
x
x
SiHx22N60EL
21
0.197
37
x
x
SiHx23N60E
23
0.158
63
x
x
SiHx26N60E
25
0.117
77
SiHx30N60E
29
0.125
85
x
x
SiHx33N60E
33
0.099
100
x
x
x
x
x
x
x
x
x
x
x
x
x
SiHx73N60E
73
0.039
241
x
SiHx6N65E
5.6
0.868
16
SiHx6N65E
7
0.600
24
SiHx7N65E
7.9
0.598
22
SiHx11N65E
12
0.363
34
SiHx15N65E
15
0.280
48
SiHx21N65E
20
0.170
66
SiHx22N65E
22
0.180
73
SiHx24N65E
23
0.150
77
SiHx24N65E
24
0.145
81
SiHx28N65E
28
0.122
x
x
x
x
x
x
x
x
x
x
x
x
131
35
x
x
147
48
x
x
0.075
0.380
x
x
0.064
0.260
x
x
40
12
x
x
47
15
x
x
SiHx40N60E
SiHx12N65E
x
x
SiHx47N60E
SiHx14N65E
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
93
x
x
x
x
x
SiHx33N65E
32
0.105
115
x
SiHx47N65E
47
0.072
182
x
SiHx64N65E
64
0.047
239
x
2/3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND
THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VMN-PT0273-1605
www.vishay.com
V I S H AY I N T E R T E C H N O L O G Y, I N C .
POWER MOSFETs
E and EF Series High-Voltage
IPAK
(TO-251)
POWERPAK®
8X8
POWERPAK®
SO-8L
(Typ) (nC)
DPAK
(TO-252)
(Max) (Ω)
D2PAK
(TO-263)
VGS = 10 V
(A)
PACKAGES
TO-220
Qg
TO-220
FULLPAK
PRODUCT
RDS(on)
THIN-LEAD
TO-220
FULLPAK
(V)
ID
TO-247
V(BR)DSS
G
A
F
P
B
D
U
H
J
650 V
EF Series
600 V
x=
PRODUCT SHEET
SiHx11N60EF
11
0.357
31
x
SiHx14N60EF
15
0.266
42
x
SiHx21N60EF
21
0.176
56
SiHx26N60EF
24
0.141
80
SiHx28N60EF
28
0.123
80
x
SiHx33N60EF
33
0.098
103
x
SiHx47N60EF
47
0.065
152
x
SiHx70N60EF
70
0.038
253
x
SiHx11N65EF
11
0.382
35
x
SiHx14N65EF
15
0.271
49
x
SiHx21N65EF
21
0.180
71
x
x
SiHx24N65EF
24
0.156
81
x
x
x
x
x
x
x
x
SiHx28N65EF
28
0.117
97
x
SiHx33N65EF
32
0.109
114
x
SiHx44N65EF
46
0.073
185
x
SiHx61N65EF
64
0.047
247
x
x
x
x
x
x
x
x
x
x
x
x
x
3/3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND
THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VMN-PT0273-1605
www.vishay.com