V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs E and EF Series High-Voltage 500 V, 600 V, and 650 V High-Performance Superjunction MOSFETs APPLICATIONS KEY BENEFITS • Optimal design –– Low on-resistance (RDS(on)) –– Reduced switching losses –– Ultra-low gate charge (Qg) –– Simple gate drive circuitry • 600 V EF Fast Body Diode –– Increased robustness –– Designed for soft switching topologies • • • • • • Server and telecom power supplies Lighting Industrial Renewable energy Switch Mode Power Supplies Computing and consumer APPLICATION NOTES: • • • • • How 2 Turn on a MOSFET Power MOSFET Basics: Understanding Superjunction Technology How to Select the Right MOSFET for Power Factor Correction Applications Zero-Voltage Switching Full-Bridge Converter: Operation, FOM, and Guidelines for MOSFET Selection Two-Switch Forward Converter: Operation, FOM, and MOSFET Selection Guide RESOURCES • E Series products: www.vishay.com/mosfets/e-series-high-voltage-standard/ • EF Series products: www.vishay.com/mosfets/ef-series-high-voltage/ • For technical questions, contact: [email protected] A WORLD OF SOLUTIONS PRODUCT SHEET 1/3 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PT0273-1605 www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs E and EF Series High-Voltage IPAK (TO-251) POWERPAK® 8X8 POWERPAK® SO-8L (Typ) (nC) DPAK (TO-252) (Max) (Ω) D2PAK (TO-263) VGS = 10 V (A) PACKAGES TO-220 Qg TO-220 FULLPAK PRODUCT RDS(on) THIN-LEAD TO-220 FULLPAK (V) ID TO-247 V(BR)DSS G A F P B D U H J 650 V E Series 600 V 500 V x= PRODUCT SHEET SiHx12N50E 11 0.380 25 SiHx15x50E 15 0.280 33 x x x SiHx20x50E 19 0.184 46 x x x x SiHx25N50E 26 0.145 57 x x x x SiHx7N60E 7 0.600 20 SiHx8N60E 8 0.520 22 SiHx11N60E 11 0.364 26 SiHx12N60E 12 0.380 29 SiHx14N60E 13 0.309 32 SiHx14N60E 16 0.225 41 SiHx15N60E 15 0.280 39 SiHx18N60E 18 0.202 46 SiHx21N60E 20 0.176 55 SiHx22N60E 21 0.180 57 x x SiHx22N60EL 21 0.197 37 x x SiHx23N60E 23 0.158 63 x x SiHx26N60E 25 0.117 77 SiHx30N60E 29 0.125 85 x x SiHx33N60E 33 0.099 100 x x x x x x x x x x x x x SiHx73N60E 73 0.039 241 x SiHx6N65E 5.6 0.868 16 SiHx6N65E 7 0.600 24 SiHx7N65E 7.9 0.598 22 SiHx11N65E 12 0.363 34 SiHx15N65E 15 0.280 48 SiHx21N65E 20 0.170 66 SiHx22N65E 22 0.180 73 SiHx24N65E 23 0.150 77 SiHx24N65E 24 0.145 81 SiHx28N65E 28 0.122 x x x x x x x x x x x x 131 35 x x 147 48 x x 0.075 0.380 x x 0.064 0.260 x x 40 12 x x 47 15 x x SiHx40N60E SiHx12N65E x x SiHx47N60E SiHx14N65E x x x x x x x x x x x x x x x x x x x x x x x 93 x x x x x SiHx33N65E 32 0.105 115 x SiHx47N65E 47 0.072 182 x SiHx64N65E 64 0.047 239 x 2/3 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PT0273-1605 www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs E and EF Series High-Voltage IPAK (TO-251) POWERPAK® 8X8 POWERPAK® SO-8L (Typ) (nC) DPAK (TO-252) (Max) (Ω) D2PAK (TO-263) VGS = 10 V (A) PACKAGES TO-220 Qg TO-220 FULLPAK PRODUCT RDS(on) THIN-LEAD TO-220 FULLPAK (V) ID TO-247 V(BR)DSS G A F P B D U H J 650 V EF Series 600 V x= PRODUCT SHEET SiHx11N60EF 11 0.357 31 x SiHx14N60EF 15 0.266 42 x SiHx21N60EF 21 0.176 56 SiHx26N60EF 24 0.141 80 SiHx28N60EF 28 0.123 80 x SiHx33N60EF 33 0.098 103 x SiHx47N60EF 47 0.065 152 x SiHx70N60EF 70 0.038 253 x SiHx11N65EF 11 0.382 35 x SiHx14N65EF 15 0.271 49 x SiHx21N65EF 21 0.180 71 x x SiHx24N65EF 24 0.156 81 x x x x x x x x SiHx28N65EF 28 0.117 97 x SiHx33N65EF 32 0.109 114 x SiHx44N65EF 46 0.073 185 x SiHx61N65EF 64 0.047 247 x x x x x x x x x x x x x 3/3 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PT0273-1605 www.vishay.com