rflw3n

RFLW 3N
www.vishay.com
Vishay Electro-Films
High Frequency Wire Bondable RF Spiral Inductor, 0.030" x 0.030"
FEATURES
• High frequency
• Wire bond assembly
• Small size: 0.030" x 0.030" x 0.020"
• Low DCR, high Q
• Low parasitic capacitance, high SRF
• Equivalent circuit model enclosed
RFLW series of thin film spiral inductors on quartz are
designed for RF circuits that require wire bondable
components. High precision equivalent circuit modeling
enables accurate computer simulation of component
performance. Measured S parameter files are also available
upon request.
• S parameter files available for download
In many RF applications, correct component selection is
achieved through experimentation. To help designers during
the design process, a sample kit of standard values is
available.
• RF choking for DC biasing
• Sample kit available
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• RF tuning circuits
• Lumped element filters


Additional values and form factors available upon request.
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Inductance Range
(1)
VALUE
UNIT
0.003 to 0.03
μH
Tolerance (2)
± 20
%
Max. Power Handling (3)
125
mW
Operating Temperature
- 55 to + 125
°C
Storage Temperature
- 55 to + 125
°C
Stability, 1000 h, + 125 °C, 125 mW
2.0 max. R/R
%
ESD: AEC-Q200-002, component classification 5B (up to 16 kV)
5.0 max. R/R
%
Notes
(1) Custom values available upon request. See custom design section below.
(2) Main source of value tolerance is due to variation in wire bonds. See “test fixture” section below.
(3) Maximum rated power of 125 mW at 70 °C, linearly de-rated to zero at 125 °C.
RF CHARACTERISTICS - TYPICAL VALUES
PART NUMBER
INDUCTANCE
(nH)
DCR
()
IN-CIRCUIT
INDUCTANCE (4)
(nH)
IN-CIRCUIT
DCR (4)
()
Q
(UNITLESS)
SRF
(GHz)
250 MHz
1000 MHz
250 MHz
1000 MHz
RFLW3N3900C
3.9
3.9
0.3
5
0.4
14
17
>6
RFLW3N6700C
6.7
6.7
0.6
8
0.7
13
16
>6
RFLW3N9000C
9
9
1.0
10
1.1
12
15
>6
RFLW3N1100B
11
11
1.2
12
1.3
11
14
>6
RFLW3N2000B
20
20
1.6
21
1.7
12
12
>6
RFLW3N3000B
30
30
2.5
31
2.6
13
13
>6
Note
(4) Including the added inductance and resistance of typical bond wires at 250 MHz. See equivalent circuit section below.
Revision: 17-Sep-13
Document Number: 61057
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RFLW 3N
www.vishay.com
Vishay Electro-Films
DIMENSIONS in inches (millimeters)
0.030
Ø 0.004
0.030
0.001
0.013
0.004
0.001
0.013
0.004
LENGTH
0.030 (0.75) ± 0.003
WIDTH
0.030 (0.75) ± 0.003
THICKNESS
0.020 (0.5) ± 0.001
BOND PAD DIAMETER
4 (0.1)
MECHANICAL SPECIFICATIONS
Chip substrate material
Conductor material
Conductor thickness
Bond pad diameter
Quartz
Gold
5 μm ± 20 %
0.004"
GLOBAL PART NUMBER INFORMATION
Global Part Number: RFLW3N2000BMNT0
Global Part Number Description: RFLW 30 x 30 NO PASS 20 nH 20 % T0
R
F
L
W
3
N
2
MODEL
SIZE
PASSIVATION
INDUCTANCE
(nH)
RFLW
3 = 30 x 30
5 = 50 x 50
S=
Silicon nitride
N=
None
First 4 digits
are significant
figures of
capacitance
0
0
INDUCTANCE
MULTIPLIER
CODE
C = 0.001
B = 0.01
A = 0.1
0
B
TOLERANCE
CODE
M = 20 %
L = 25 %
M
N
SPECIAL
N = None
T
0
PACKAGING
CODE
WAFFLE
WS =
100 min., 1 mult
TAPE AND REEL
T0 = 100 min., 100
mult
T1 = 1000 min., 100
mult
Ts = 100 min., 1 mult
EQUIVALENT CIRCUIT
The Inductor’s spiral trace presents a substantial amount of series resistance, and the close spacing of spiral turns present
measurable amounts of stray capacitance that interact with the inductive characteristics.
For accurate modeling of the RFLW component in-circuit performance, measured S parameter files are available upon request.
Another useful tool commonly used to model the behavior of electronic components at high frequency is the equivalent circuit
model. While the equivalent circuit model accurately predicts the reactive part of the total impedance, it fails to determine the
real part of the response at high frequency. This is due to the fact that the model does not include skin and proximity effects
that significantly increase the real part of the impedance as the frequency rises.
Revision: 17-Sep-13
Document Number: 61057
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RFLW 3N
www.vishay.com
Vishay Electro-Films
Bond Wire
Rbw
Spiral Inductor
Lbw
L
L: Desire inductance
R: Parasitic self resistance
C: Parasitic shunt capacitance
Rbw: Bond wire self resistance
Lbw: Parasitic bond wire inductance
R
C
Equivalent Circuit Model
The equivalent circuit values are presented in the table below:
EQUIVALENT CIRCUIT MODEL - TYPICAL VALUES
INDUCTANCE
(nH)
L
3.9
6.7
9
11
20
30
SHUNT CAPACITANCE
(fF)
C
1
1
1
5
10
11
DCR
() (1)
0.3
0.6
1.0
1.2
1.6
2.5
Rbw (2)
()
Lbw
(nH)
1.2
1.2
1.2
1.2
1.2
1.2
0.09
0.09
0.09
0.09
0.09
0.09
Notes
(1) DCR tolerance ± 20 %
(2) Typical bond wires are approximated as being 1.25 mil in diameter gold, totaling a length of 3 mil. The resistance listed above includes the
added effect of the bond wire adhesion to the circuit board and component.
TEST FIXTURE
The results presented in the datasheet were obtained by assembling the components onto a thin film test fixture using
non-conducting epoxy and 1.25 mil diameter gold bond wires.
Measurements were conducted using an HP 8753E network analyzer with cascade micro-tech air coplanar probes.
The parasitic elements of the bond wires are a major contributor to the tolerance of the lower value components. We consider
the following bond-wire geometry to be typical for the assembly of the RFLW pars:
Side pad on inductor
Center pad on inductor
20 mil
Au bond wire pads,
20 mil2
RFLW
20 mil
Alumina Test Board, 25 mil thick
10 mil
Text Fixture Diagram
Revision: 17-Sep-13
Document Number: 61057
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RFLW 3N
www.vishay.com
Vishay Electro-Films
TYPICAL COMPONENT PERFORMANCE
40
35
Inductance (nH)
30
30 nH
25
20
20 nH
15
10
9 nH
11 nH
6.7 nH
3.9 nH
5
0
10
100
1000
10 000
Frequency (MHz)
Inductance vs. Frequency
20
3.9 nH
6.7 nH
18
16
9 nH
Q (Unitless)
14
12
10
8
6
11 nH
4
20 nH
30 nH
2
0
10
100
1000
10 000
Frequency (MHz)
Quality Factor vs. Frequency
LAYOUT CONSIDERATIONS
The RF spiral inductor is electrically connected to the circuit by wire bonds. All wire bonds add parasitic inductance and
resistance, as shown in the schematic drawing above.
It is important to note that setup variations might affect the performance of the component. Special care must be given to
minimize these effects by careful design of the component host circuit board. The following aspects should be considered:
• Bond wire length should be minimized. The bond wire added inductance can be roughly estimated at 0.75 nH per mil of
1.25 mil diameter gold wire.
• Any ground plane directly under the component will increase the parasitic shunt capacitance. This will cause self resonance
at lower frequencies.
• The epoxy used to attach the component is the limiting factor in power handling. Applications that require high power handling
are recommended to use high temperature epoxy and to insure adequate heat sinking.
CUSTOM DESIGNED SPIRAL INDUCTORS
Vishay EFI will custom design and measure additional values and form factors upon request.
Typical inductance density is limited to:  110 nH/mm2
It is important to note, that both series resistance and SRF characteristics will degrade as inductance values approach the
inductance density limit presented above.
Revision: 17-Sep-13
Document Number: 61057
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000