Application Note NJG1131HA8 280MHz BAND APPLICATION The characteristics of 280MHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 1-1 MEASURED DATA1 (DC) General conditions: VDD=2.7V, Ta=+25oC, Zs=Zl=50Ω PARAMETERS DATA UNITS 2.7 V 3.23 mA DATA UNITS fRF 280 MHz Gain 11.52 dB 0.93 dB -8.5 dBm +4.3 dBm SYMBOL Supply Voltage VDD Operating Current IDD CONDITIONS RF OFF 1-2 MEASURED DATA2 (RF) General conditions: VDD=2.7V, fRF=280MHz, Ta=+25oC, Zs=Zl=50Ω PARAMETERS Frequency Small Signal Gain Noise Figure SYMBOL NF Input Power 1dB Compression P-1dB(IN) Input 3rd Order Intercept Point IIP3 CONDITIONS Exclude PCB, Connector Losses (0.025dB) f1=fRF, f2=fRF+100kHz, Pin=-28dBm RF IN VSWR VSWRi 1.48 - RF OUT VSWR VSWRo 1.07 - 1 Application Note 1-3 NJG1131HA8 APPLICATION CIRCUIT Top View C3 1000pF VG GND 6 1 RF OUT L3 56nH VDD=2.7V RF OUT 5 L2 270nH Bias Circuit C2 7pF RF IN 2 C1 100pF 1-4 4 RF IN GND 3 GND L1 120nH PCB DESIGN Top View PARTS LIST Parts ID VDD L1~L3 C3 C1~C3 L3 Comment TAIYO-YUDEN (HK1005 Series) MURATA (GRM15 Series) C1 L2 RF IN C2 RF OUT L1 PCB (FR-4)： t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50Ω) PCB SIZE=16.8mm×16.8mm 2 Application Note NJG1131HA8 1-5-1 CHARACTERISTICS General conditions: VDD=2.7V, fRF=280MHz, Ta=+25oC, Zs=Zl=50Ω Pout vs. Pin at 280MHz Gain, IDD vs. Pin at 280MHz 10 13 5 12 7 Gain (dB) -5 -10 Pout -15 11 6 10 5 9 4 8 IDD (mA) Gain 0 Pout (dBm) 8 3 -20 IDD 7 -25 2 6 -30 1 P-1dB(IN)=-8.5dBm P-1dB(IN)=-8.5dBm -35 -40 5 -35 -30 -25 -20 -15 -10 -5 0 -40 0 -35 -30 -25 -20 -15 -10 -5 0 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin at 280MHz Gain, NF vs. Frequency 20 12 4 0 Pout Gain (dB) Pout, IM3 (dBm) -20 -40 -60 11 3.5 10 3 9 2.5 8 2 7 1.5 6 NF (dB) Gain 1 NF -80 -100 -40 -30 5 IIP3=+4.3dBm IM3 -20 -10 0 0.5 (Exclude PCB, Connector Losses) 10 4 150 200 250 300 350 0 400 Frequency (MHz) Pin (dBm) K-factor vs. Frequency 20 K-factor 15 10 5 0 0 5000 10000 15000 20000 Frequency (MHz) 3 Application Note NJG1131HA8 1-5-2 CHARACTERISTICS General conditions: VDD=2.7V, Ta=+25oC, Zs=Zl=50Ω S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) 4