Application Note 2 NJG1133MD7 2.1GHz/2.1GHz /900MHz Bands Application 2-1 Summary The characterisitics of Band1, 4, 8 have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 2-2-1 Measurement data of assembled evaluation board DC Characteristics General condition : VDD=2.8V, Ta=+25oC Parameter Condition Symbol Measurement Data Units VDD 2.8 V Control Voltage 1 (High) VCTL1(H) 1.8 V Control Voltage 1 (Low) VCTL1(L) 0 V Control Voltage 2 (High) VCTL2(H) 1.8 V Control Voltage 2 (Low) VCTL2(L) 0 V Control Voltage 3 (High) VCTL3(H) 1.8 V VCTL3(L) 0 V IDD1 2.35 mA IDD2 2.40 mA IDD3 2.23 mA RF OFF, VCTL3=0V IDD7 31.9 uA Control Current 1 VCTL1=1.8V ICTL1 4.8 uA Control Current 2 VCTL2=1.8V ICTL2 4.9 uA Control Current 3 VCTL3=1.8V ICTL3 5.0 uA Supply Voltage Control Voltage 3 (Low) Operating Current 1 (Band1 High Gain Mode) Operating Current 2 (Band 8 High Gain Mode) Operating Current 3 (Band 4 High Gain Mode) Operating Current 4 (Low Gain mode) RF OFF, VCTL1=0V, VCTL2=0V, VCTL3=1.8V RF OFF, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V RF OFF, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V 1/19 Application Note 2 NJG1133MD7 2-2-2 Measurement data of assembled evaluation board RF Characteristics 1 (Band 1, High Gain Mode) General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2110~2170MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain 15.8 ~ 16.0 dB NF 1.30 ~ 1.37 dB P-1dB(IN) -8.7 ~ -7.7 dBm IIP3 +0.4 ~ +0.9 dBm RF IN VSWR VSWRi 1.47 ~ 1.71 RF OUT VSWR VSWRo 1.84 ~ 1.93 Parameter Condition Exclude Input & Output PCB, Connector Losses (0.45dB) Exclude PCB, Connector Losses (0.09dB) Small Signal Gain Noise Figure Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF Characteristics 2 (Band 1, Low Gain Mode) General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2110~2170MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain -3.6 ~ -3.4 dB NF 3.5 ~ 4.4 dB P-1dB(IN) +14.0 ~ +14.3 dBm IIP3 +11.9 ~ +12.8 dBm RF IN VSWR VSWRi 1.22 ~ 1.48 RF OUT VSWR VSWRo 1.72 ~ 1.91 Parameter Small Signal Gain Noise Figure Condition Exclude Input & Output PCB, Connector Losses (0.45dB) Exclude PCB, Connector Losses (0.09dB) Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-16dBm 2/19 Application Note 2 NJG1133MD7 2-2-3 Measurement data of assembled evaluation board RF Characteristics 3 (Band 8, High Gain Mode) General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=925~960MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain 15.9 ~ 16.2 dB NF 1.37 ~ 1.46 dB P-1dB(IN) -8.0 ~ -7.5 dBm IIP3 +1.6 ~ +2.0 dBm RF IN VSWR VSWRi 1.70 ~ 1.83 RF OUT VSWR VSWRo 1.49 ~ 1.80 Parameter Condition Exclude Input & Output PCB, Connector Losses (0.22dB) Exclude PCB, Connector Losses (0.06dB) Small Signal Gain Noise Figure Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF Characteristics 4 (Band 8, Low Gain Mode) General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=925~960MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain -3.8 ~ -3.7 dB NF 2.6 ~ 4.6 dB P-1dB(IN) +17.1 ~ +17.5 dBm IIP3 +14.0 ~ +14.9 dBm RF IN VSWR VSWRi 1.70 ~ 1.80 RF OUT VSWR VSWRo 2.69 ~ 2.80 Parameter Small Signal Gain Noise Figure Condition Exclude Input & Output PCB, Connector Losses (0.22dB) Exclude PCB, Connector Losses (0.06dB) Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-20dBm 3/19 Application Note 2 NJG1133MD7 2-2-4 Measurement data of assembled evaluation board RF Characteristics 5 (Band 4, High Gain Mode) General condition : VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=2110~2155MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain 14.4 ~ 14.7 dB NF 1.60 ~ 1.67 dB P-1dB(IN) -7.6 ~ -7.4 dBm IIP3 +1.9 ~ +2.2 dBm RF IN VSWR VSWRi 1.67 ~ 1.69 RF OUT VSWR VSWRo 1.85 ~ 1.94 Parameter Condition Exclude Input & Output PCB, Connector Losses (0.40dB) Exclude PCB, Connector Losses (0.12dB) Small Signal Gain Noise Figure Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF Characteristics 6 (Band 4, Low Gain Mode) General condition : VDD=2.8V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=2110~2155MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Parameter Small Signal Gain Noise Figure Condition Exclude Input & Output PCB, Connector Losses (0.40dB) Exclude PCB, Connector Losses (0.12dB) Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-16dBm Symbol Measurement Data Units Gain -5.4 ~ -5.4 dB NF 4.8 ~ 6.1 dB P-1dB(IN) +17.1 ~ +17.8 dBm IIP3 +16.3 ~ +16.8 dBm RF IN VSWR VSWRi 2.65 ~ 2.68 RF OUT VSWR VSWRo 3.37 ~ 3.39 4/19 Application Note 2 NJG1133MD7 2-3 Pin configuration (Top View) GND 11 GND RFIN3 10 GND 9 8 RFIN2 RFOUT3 13 12 7 Band 4 (2.1G) Bias Circuit RFOUT2 RFIN1 13 6 Band 1 (2.1G) Bias Circuit Logic Circuit VCTL3 Band 8 (900M) 14 5 Bias Circuit GND 1 VCTL2 2 VCTL1 RFOUT1 3 GND 4 VCTL terminal function VCTL1, VCTL2：Band Select (Band 1 or 4 or 8) VCTL3：RX ATT Select (High Gain mode or Low Gain mode) 2-4 Truth table Control Voltage VCTL1 VCTL2 VCTL3 State Band 1 (2.1GHz) Band 8 (900MHz) Band 4 (2.1GHz) (Band Sel1) (Band Sel2) (RX ATT) LNA IDD Bypass LNA IDD Bypass LNA IDD Bypass L L H H L L H H L L L L H H H H L H L H L H L H OFF ON OFF OFF OFF OFF OFF OFF ON OFF ON OFF ON OFF ON OFF OFF OFF OFF ON OFF OFF OFF OFF ON OFF ON OFF ON OFF ON OFF OFF OFF OFF OFF OFF ON OFF ON ON OFF ON OFF ON OFF ON OFF “L”=0～0.3V、“H”=1.36～1.9V 5/19 Application Note 2 NJG1133MD7 2-5-1 Typical characteristics (Band 1, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V 2.1GHz (Band 1) @High Gain Pout vs. Pin 2.1GHz (Band 1) @High Gain Gain, IDD vs. Pin (f=2140MHz) (f=2140MHz) 10 20 5 18 8 7 Gain (dB) Pout (dBm) 0 Pout -5 -10 -15 16 6 14 5 12 4 IDD 10 3 8 2 IDD (mA) Gain P-1dB(IN)=-8.0dBm -20 P-1dB(IN)=-8.0dBm 6 -30 -20 -10 0 4 -40 10 0 -30 -20 Pin (dBm) (f1=2140MHz, f2=f1+100kHz) (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm) 22 12 20 10 18 -20 OIP3 (dBm) Pout, IM3 (dBm) Pout -40 -60 IM3 IIP3=+0.8dBm -100 -40 -30 -20 -10 0 16 6 14 4 12 2 IIP3 10 0 8 -2 6 2.1 10 8 OIP3 2.12 2.14 Pin (dBm) 2.16 -4 2.2 2.18 frequency (GHz) 2.1GHz (Band 1) @High Gain NF, Gain vs. frequency 2.1GHz (Band 1) @High Gain k factor vs. frequency (f=2~2.3GHz) (f=50M~20GHz) 5 18 4 16 20 Gain 3 2 14 12 NF k factor 15 Gain (dB) Noise Figure (dB) 10 2.1GHz (Band 1) @High Gain OIP3, IIP3 vs. frequency 20 -80 0 Pin (dBm) 2.1GHz (Band 1) @High Gain Pout, IM3 vs. Pin 0 -10 10 5 1 10 (NF: Exclude PCB, Connector Losses) 0 2 2.05 2.1 2.15 2.2 frequency (GHz) 2.25 8 2.3 0 0 5 10 15 20 frequency (GHz) 6/19 IIP3 (dBm) -25 -40 1 Application Note 2 NJG1133MD7 2-5-2 Typical characteristics (Band 1, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 7/19 Application Note 2 NJG1133MD7 2-5-3 Typical characteristics (Band 1, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V 2.1GHz (Band 1) @Low Gain Gain, IDD vs. Pin 2.1GHz (Band 1) @Low Gain Pout vs. Pin (f=2140MHz) 0 10 -2 0 -4 100 -6 80 140 120 Pout -20 IDD -8 -10 -30 -50 -40 -30 -20 -10 0 40 -12 P-1dB(IN)=+14.0dBm -40 10 -14 -40 20 0 -30 -20 (f1=2140MHz, f2=f1+100kHz) OIP3 (dBm) Pout, IM3 (dBm) Pout -40 -60 IM3 IIP3=+12.1dBm -20 24 10 22 -10 0 6 18 4 16 2 14 IIP3 0 12 -2 10 -4 2.1 10 20 OIP3 2.12 2.14 Pin (dBm) 2.16 8 2.2 2.18 frequency (GHz) 2.1GHz (Band 1) @Low Gain NF, Gain vs. frequency 2.1GHz (Band 1) @Low Gain k factor vs. frequency (f=2~2.3GHz) 8 -3 7 -4 Gain 6 -5 5 -6 NF -7 3 (f=50M~20GHz) 20 15 k factor -2 Gain (dB) 9 4 20 12 8 -30 10 (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm) 0 -100 -40 0 2.1GHz (Band 1) @Low Gain OIP3, IIP3 vs. frequency 20 -80 -10 Pin (dBm) 2.1GHz (Band 1) @Low Gain Pout, IM3 vs. Pin -20 20 P-1dB(IN)=+14.0dBm Pin (dBm) Noise Figure (dB) 60 10 5 -8 (NF: Exclude PCB, Connector Losses) 2 2 2.05 2.1 2.15 2.2 frequency (GHz) 2.25 -9 2.3 0 0 5 10 15 20 frequency (GHz) 8/19 IIP3 (dBm) -10 IDD (uA) Gain Gain (dB) Pout (dBm) (f=2140MHz) 20 Application Note 2 NJG1133MD7 2-5-4 Typical characteristics (Band 1, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 9/19 Application Note 2 NJG1133MD7 2-5-5 Typical characteristics (Band 8, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V 900MHz (Band 8) @High Gain Gain, IDD vs. Pin 900MHz (Band 8) @High Gain Pout vs. Pin (f=942.5MHz) (f=942.5MHz) 10 20 5 18 7 Gain 16 Pout -10 -15 P-1dB(IN)=-8.0dBm -20 -25 -40 -30 -20 -10 0 IDD 14 12 4 10 3 8 2 P-1dB(IN)=-8.0dBm 6 4 -40 10 -20 (f1=942.5MHz, f2=f1+100kHz) -20 OIP3 (dBm) Pout, IM3 (dBm) 22 12 20 10 OIP3 18 -40 -60 8 16 6 14 4 12 2 IIP3 10 IM3 IIP3=+1.3dBm -20 -10 0 -2 8 0 6 900 10 920 940 Pin (dBm) 960 -4 1000 980 frequency (MHz) 900MHz (Band 8) @High Gain NF, Gain vs. frequency 900MHz (Band 8) @High Gain k factor vs. frequency (f=800M~1.1GHz) (f=50M~20GHz) 5 18 4 20 16 15 3 14 2 12 k factor Gain Gain (dB) Noise Figure (dB) 10 (f1=900M~1GHz, f2=f1+100kHz, Pin=-30dBm) Pout -30 0 900MHz (Band 8) @High Gain OIP3, IIP3 vs. frequency 20 -100 -40 -10 Pin (dBm) 900MHz (Band 8) @High Gain Pout, IM3 vs. Pin -80 1 0 -30 Pin (dBm) 0 5 10 NF 5 1 10 (NF: Exclude PCB, Connector Losses) 0 800 850 900 950 1000 frequency (MHz) 1050 8 1100 0 0 5 10 15 20 frequency (GHz) 10/19 IIP3 (dBm) -5 6 IDD (mA) Gain (dB) 0 Pout (dBm) 8 Application Note 2 NJG1133MD7 2-5-6 Typical characteristics (Band 8, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 11/19 Application Note 2 NJG1133MD7 2-5-7 Typical characteristics (Band 8, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V 900MHz (Band 8) @Low Gain Pout vs. Pin 900MHz (Band 8) @Low Gain Gain, IDD vs. Pin (f=942.5MHz) 0 800 10 -2 600 0 -4 Pout -20 -30 400 -6 200 -8 0 IDD -10 P-1dB(IN)=+17.5dBm -40 -50 -40 -30 -20 -10 0 10 P-1dB(IN)=+17.5dBm -12 -14 -40 20 -200 -400 -600 -30 -20 Pin (dBm) -10 0 10 20 Pin (dBm) 900MHz (Band 8) @Low Gain OIP3, IIP3 vs. frequency 900MHz (Band 8) @Low Gain Pout, IM3 vs. Pin (f1=900M~1GHz, f2=f1+100kHz, Pin=-20dBm) (f1=942.5MHz, f2=f1+100kHz) 16 20 24 14 22 OIP3 12 -20 OIP3 (dBm) Pout, IM3 (dBm) 0 Pout -40 -60 IIP3=+14.4dBm -30 -20 10 18 8 16 6 14 IIP3 4 IM3 -80 -100 -40 -10 0 12 2 10 0 900 10 920 940 960 8 1000 980 frequency (MHz) Pin (dBm) 900MHz (Band 8) @Low Gain NF, Gain vs. frequency 900MHz (Band 8) @Low Gain k factor vs. frequency (f=800M~1.1GHz) (f=50M~20GHz) -2 12 -3 10 -4 Gain 8 -5 6 -6 NF 4 -7 2 20 15 k factor 14 Gain (dB) Noise Figure (dB) 20 10 5 -8 (NF: Exclude PCB, Connector Losses) 0 800 850 900 950 1000 frequency (MHz) 1050 -9 1100 0 0 5 10 15 20 frequency (GHz) 12/19 IIP3 (dBm) -10 Gain IDD (uA) Gain (dB) Pout (dBm) (f=942.5MHz) 20 Application Note 2 NJG1133MD7 2-5-8 Typical characteristics (Band 8, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 13/19 Application Note 2 NJG1133MD7 2-5-9 Typical characteristics (Band 4, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V 2.1GHz (Band 4) @High Gain Pout vs. Pin 2.1GHz (Band 4) @High Gain Gain, IDD vs. Pin (f=2132.5MHz) (f=2132.5MHz) 18 5 16 Gain (dB) Pout -10 P-1dB(IN)=-7.4dBm -20 -25 -40 -30 -20 6 12 5 IDD 10 8 3 6 2 P-1dB(IN)=-7.4dBm 4 -10 0 2 -40 10 -20 20 14 18 12 16 -20 OIP3 (dBm) Pout, IM3 (dBm) Pout -40 -60 IM3 IIP3=+2.1dBm -20 -10 10 (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm) (f1=2132.5MHz, f2=f1+100kHz) -30 0 2.1GHz (Band 4) @High Gain OIP3, IIP3 vs. frequency 20 -100 -40 -10 Pin (dBm) 2.1GHz (Band 4) @High Gain Pout, IM3 vs. Pin -80 1 0 -30 Pin (dBm) 0 4 0 14 8 12 6 10 4 IIP3 8 2 6 0 4 2.1 10 10 OIP3 2.12 2.14 2.16 2.18 -2 2.2 frequency (GHz) Pin (dBm) 2.1GHz (Band 4) @High Gain NF, Gain vs. frequency 2.1GHz (Band 4) @High Gain k factor vs. frequency (f=2~2.3GHz) 5 18 4 16 (f=50M~20GHz) 20 14 NF 2 12 1 10 k factor Gain 3 Gain (dB) 15 10 5 (NF: Exclude PCB, Connector Losses) 0 2 2.05 2.1 2.15 2.2 frequency (GHz) 2.25 8 2.3 0 0 5 10 15 20 frequency (GHz) 14/19 IIP3 (dBm) -5 -15 Noise Figure (dB) 7 Gain 14 0 Pout (dBm) 8 IDD (mA) 10 Application Note 2 NJG1133MD7 2-5-10 Typical characteristics (Band 4, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 15/19 Application Note 2 NJG1133MD7 2-5-11 Typical characteristics (Band 4, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V 2.1GHz (Band 4) @Low Gain Gain, IDD vs. Pin 2.1GHz (Band 4) @Low Gain Pout vs. Pin (f=2132.5MHz) (f=2132.5MHz) 20 -2 10 -4 350 300 Gain (dB) -10 Pout -20 -6 250 -8 200 IDD -10 -12 -30 P-1dB(IN)=+17.8dBm -40 -50 -40 -30 -20 -10 0 10 100 P-1dB(IN)=+17.8dBm -14 -16 -40 20 -20 -10 0 10 2.1GHz (Band 4) @Low Gain Pout, IM3 vs. Pin 2.1GHz (Band 4) @Low Gain OIP3, IIP3 vs. frequency 20 (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm) 0 14 28 12 26 10 Pout OIP3 (dBm) Pout, IM3 (dBm) 0 -30 Pin (dBm) (f1=2132.5MHz, f2=f1+100kHz) -20 50 Pin (dBm) 20 -40 -60 IM3 24 OIP3 8 22 6 20 4 18 IIP3 2 16 0 14 IIP3=+16.3dBm -80 -100 -40 -30 -20 -10 0 -2 2.1 10 2.12 2.14 Pin (dBm) 12 2.2 2.18 2.1GHz (Band 4) @Low Gain k factor vs. frequency (f=50M~20GHz) (f=2~2.3GHz) 10 -5 9 -6 Gain 8 -7 7 -8 NF -9 5 20 15 k factor -4 Gain (dB) 11 6 2.16 frequency (GHz) 2.1GHz (Band 4) @Low Gain NF, Gain vs. frequency Noise Figure (dB) 150 10 5 -10 (NF: Exclude PCB, Connector Losses) 4 2 2.05 2.1 2.15 2.2 frequency (GHz) 2.25 -11 2.3 0 0 5 10 15 20 frequency (GHz) 16/19 IIP3 (dBm) Pout (dBm) 0 IDD (uA) Gain Application Note 2 NJG1133MD7 2-5-12 Typical characteristics (Band 4, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 17/19 Application Note 2 NJG1133MD7 2-6 Application circuit (Top View) RF IN 3 (Band 4) L7 3n RF IN 2 (Band 1) L5 1.6n GND 11 RFIN3 10 GND 9 GND 8 RFIN2 C4 3p RFOUT3 13 12 7 RF OUT 3 (Band 4) Band 4 (2.1G) L4 2.4n RF IN 1 (Band 8) L2 6.8n L8 2.7n Bias Circuit C2 2p RFOUT2 RFIN1 13 C5 0.01u 6 Band 1 (2.1G) L1 12n Bias Circuit Logic Circuit VCTL3 RF OUT 2 (Band 1) L6 2.4n C3 0.01u C1 1.5p Band 8 (900M) 14 5 Bias Circuit VCTL3 (RX ATT) RFOUT1 L3 10n RF OUT 1 (Band 8) VDD GND 1 VCTL2 2 VCTL2 (Band Sel 2) VCTL1 3 GND 4 VCTL1 (Band Sel 1) Parts list Parts ID L1, L2, L4~L8 L3 C1~C5 Comments MURATA LQP03T Series TDK MLK0603 Series MURATA GRM03 Series 18/19 Application Note 2 NJG1133MD7 2-7 Evaluation board (Top View) RF IN3 (Band 4) RF OUT3 (Band 4) 0 ohm chip R (jumper) C5 C4 L7 VDD L8 L4 L5 L6 RF IN2 (Band 1) C2 C3 L2 C1 L1 VCTL3 RF IN1 (Band 8) VDD L3 RF OUT2 (Band 1) VCTL1 VCTL2 RF OUT1 (Band 8) PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm) PCB SIZE=35.4mm x 17.0mm CAUTION In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. 19/19