Application Note 3 NJG1133MD7 2.1GHz / 1.9GHz / 900MHz Bands Application 3-1. Summary The characterisitics of Band1, 2, 8 have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 3-2-1. Measurement data of assembled evaluation board DC Characteristics General condition : VDD=2.8V, Ta=+25oC Symbol Measurement Data Units VDD 2.8 V Control Voltage 1 (High) VCTL1(H) 1.8 V Control Voltage 1 (Low) VCTL1(L) 0 V Control Voltage 2 (High) VCTL2(H) 1.8 V Control Voltage 2 (Low) VCTL2(L) 0 V Control Voltage 3 (High) VCTL3(H) 1.8 V Control Voltage 3 (Low) VCTL3(L) 0 V Parameter Condition Supply Voltage RF OFF, VCTL1=0V, VCTL2=0V, VCTL3=1.8V RF OFF, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V RF OFF, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V IDD1 2.35 mA IDD2 2.40 mA IDD3 2.23 mA RF OFF, VCTL3=0V IDD7 31.9 uA Control Current 1 VCTL1=1.8V ICTL1 4.8 uA Control Current 2 VCTL2=1.8V ICTL2 4.9 uA Control Current 3 VCTL3=1.8V ICTL3 5.0 uA Operating Current 1 (Band1 High Gain Mode) Operating Current 2 (Band 8 High Gain Mode) Operating Current 3 (Band 4 High Gain Mode) Operating Current 4 (Low Gain mode) 1/19 Application Note 3 NJG1133MD7 3-2-2. Measurement data of assembled evaluation board RF Characteristics 1 (Band 1, High Gain Mode) General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2110~2170MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain 15.8 ~ 16.0 dB NF 1.30 ~ 1.37 dB P-1dB(IN) -8.7 ~ -7.7 dBm IIP3 +0.4 ~ +0.9 dBm RF IN VSWR VSWRi 1.47 ~ 1.71 RF OUT VSWR VSWRo 1.84 ~ 1.93 Parameter Condition Exclude Input & Output PCB, Connector Losses (0.45dB) Exclude PCB, Connector Losses (0.09dB) Small Signal Gain Noise Figure Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF Characteristics 2 (Band 1, Low Gain Mode) General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2110~2170MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain -3.6 ~ -3.4 dB NF 3.5 ~ 4.4 dB P-1dB(IN) +14.0 ~ +14.3 dBm IIP3 +11.9 ~ +12.8 dBm RF IN VSWR VSWRi 1.22 ~ 1.48 RF OUT VSWR VSWRo 1.72 ~ 1.91 Parameter Small Signal Gain Noise Figure Condition Exclude Input & Output PCB, Connector Losses (0.45dB) Exclude PCB, Connector Losses (0.09dB) Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-16dBm 2/19 Application Note 3 NJG1133MD7 3-2-3. Measurement data of assembled evaluation board RF Characteristics 3 (Band 8, High Gain Mode) General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=925~960MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain 15.9 ~ 16.2 dB NF 1.37 ~ 1.46 dB P-1dB(IN) -8.0 ~ -7.5 dBm IIP3 +1.6 ~ +2.0 dBm RF IN VSWR VSWRi 1.70 ~ 1.83 RF OUT VSWR VSWRo 1.49 ~ 1.80 Parameter Condition Exclude Input & Output PCB, Connector Losses (0.22dB) Exclude PCB, Connector Losses (0.06dB) Small Signal Gain Noise Figure Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF Characteristics 4 (Band 8, Low Gain Mode) General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=925~960MHz, Ta=+25oC, Zs=Zl=50Ω, with application circuit Symbol Measurement Data Units Gain -3.8 ~ -3.7 dB NF 2.6 ~ 4.6 dB P-1dB(IN) +17.1 ~ +17.5 dBm IIP3 +14.0 ~ +14.9 dBm RF IN VSWR VSWRi 1.70 ~ 1.80 RF OUT VSWR VSWRo 2.69 ~ 2.80 Parameter Small Signal Gain Noise Figure Condition Exclude Input & Output PCB, Connector Losses (0.22dB) Exclude PCB, Connector Losses (0.06dB) Input Power 1dB Compression Input 3rd Order Intercept Point f1=fRF, f2=fRF+100kHz, Pin=-20dBm 3/19 Application Note 3 NJG1133MD7 3-2-4. Measurement data of assembled evaluation board RF Characteristics 5 (Band 2 High Gain Mode) General Condition: VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1930~1990MHz, Ta=+25oC, Zs=Zl=50 ohm, with application circuit Symbol Measurement Data Units Gain 15.5~16.0 dB NF 1.36~1.38 dB P1dB(IN) -8.6~-8.1 dBm IIP3 +0.3~+1.0 dBm RF IN VSWR VSWRi 1.85~1.99 - RF OUT VSWR VSWRo 1.63~1.76 - Parameter Condition Small Signal Gain Exclude Input & Output PCB, Conector Losses (0.41dB) Noise Figure Exclude PCB, Connector Losses (0.10dB) Input Power 1dB Compression Input 3rd Order intercept Point f1=fRF, f2=fRF+100kHz Pin=-30dBm RF Characteristics 6 (Band 2 Low Gain Mode) General Condition: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=1930~1990MHz, Ta=+25oC, Zs=Zl=50 ohm, with application circuit Symbol Measurement Data Units Gain -4.2~-4.1 dB NF 3.8~4.7 dB P1dB(IN) +16.3~+16.8 dBm IIP3 +14.1~+14.7 dBm RF IN VSWR VSWRi 1.56~1.61 - RF OUT VSWR VSWRo 2.22~2.26 - Parameter Condition Small Signal Gain Exclude Input & Output PCB, Conector Losses (0.41dB) Noise Figure Exclude PCB, Connector Losses (0.10dB) Input Power 1dB Compression Input 3rd Order intercept Point f1=fRF, f2=fRF+100kHz Pin=-30dBm 4/19 Application Note 3 NJG1133MD7 3-3. Pin configuration (Top View) GND 11 GND RFIN3 10 GND 9 8 RFIN2 RFOUT3 13 12 7 Band 4 (2.1G) Band 2 (1.9G) Bias Circuit RFOUT2 RFIN1 13 6 Band 1 (2.1G) Bias Circuit Logic Circuit VCTL3 Band 8 (900M) 14 5 Bias Circuit GND 1 VCTL2 2 VCTL1 RFOUT1 3 GND 4 VCTL terminal function VCTL1, VCTL2：Band Select (Band 1 or 2 or 8) VCTL3：RX ATT Select (High Gain mode or Low Gain mode) 3-4. Truth table Control voltage Operating state VCTL1 VCTL2 VCTL3 (Band Sel1) (Band Sel2) (Gain Sel1) L L H H L L H H L L L L H H H H L H L H L H L H Band 1 (2.1G) LNA Bypass OFF ON ON OFF OFF ON OFF OFF OFF ON OFF OFF OFF ON OFF OFF Band 8 (900M) LNA Bypass OFF ON OFF OFF OFF ON ON OFF OFF ON OFF OFF OFF ON OFF OFF Band 2 (1.9G) LNA Bypass OFF ON OFF OFF OFF ON OFF OFF OFF ON ON OFF OFF ON ON OFF “L”=0 ~ 0.30V, “H”=1.36 ~ 1.9 V 5/19 Application Note 3 NJG1133MD7 3-5-1. Typical characteristics (Band 1, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V 2.1GHz (Band 1) @High Gain Pout vs. Pin 2.1GHz (Band 1) @High Gain Gain, IDD vs. Pin (f=2140MHz) (f=2140MHz) 10 20 5 18 8 7 Gain (dB) Pout (dBm) 0 Pout -5 -10 -15 16 6 14 5 12 4 IDD 10 3 8 2 IDD (mA) Gain P-1dB(IN)=-8.0dBm -20 P-1dB(IN)=-8.0dBm 6 -30 -20 -10 0 4 -40 10 0 -30 -20 Pin (dBm) (f1=2140MHz, f2=f1+100kHz) (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm) 22 12 20 10 18 -20 OIP3 (dBm) Pout, IM3 (dBm) Pout -40 -60 IM3 IIP3=+0.8dBm -100 -40 -30 -20 -10 0 16 6 14 4 12 2 IIP3 10 0 8 -2 6 2.1 10 8 OIP3 2.12 2.14 Pin (dBm) 2.16 -4 2.2 2.18 frequency (GHz) 2.1GHz (Band 1) @High Gain NF, Gain vs. frequency 2.1GHz (Band 1) @High Gain k factor vs. frequency (f=2~2.3GHz) (f=50M~20GHz) 5 18 4 16 20 Gain 3 2 14 12 NF k factor 15 Gain (dB) Noise Figure (dB) 10 2.1GHz (Band 1) @High Gain OIP3, IIP3 vs. frequency 20 -80 0 Pin (dBm) 2.1GHz (Band 1) @High Gain Pout, IM3 vs. Pin 0 -10 10 5 1 10 (NF: Exclude PCB, Connector Losses) 0 2 2.05 2.1 2.15 2.2 frequency (GHz) 2.25 8 2.3 0 0 5 10 15 20 frequency (GHz) 6/19 IIP3 (dBm) -25 -40 1 Application Note 3 NJG1133MD7 3-5-2. Typical characteristics (Band 1, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 7/19 Application Note 3 NJG1133MD7 3-5-3. Typical characteristics (Band 1, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V 2.1GHz (Band 1) @Low Gain Gain, IDD vs. Pin 2.1GHz (Band 1) @Low Gain Pout vs. Pin (f=2140MHz) 0 10 -2 0 -4 100 -6 80 140 120 Pout -20 IDD -8 -10 -30 -50 -40 -30 -20 -10 0 40 -12 P-1dB(IN)=+14.0dBm -40 10 -14 -40 20 0 -30 -20 (f1=2140MHz, f2=f1+100kHz) OIP3 (dBm) Pout, IM3 (dBm) Pout -40 -60 IM3 IIP3=+12.1dBm -20 24 10 22 -10 0 6 18 4 16 2 14 IIP3 0 12 -2 10 -4 2.1 10 20 OIP3 2.12 2.14 Pin (dBm) 2.16 8 2.2 2.18 frequency (GHz) 2.1GHz (Band 1) @Low Gain NF, Gain vs. frequency 2.1GHz (Band 1) @Low Gain k factor vs. frequency (f=2~2.3GHz) 8 -3 7 -4 Gain 6 -5 5 -6 NF -7 3 (f=50M~20GHz) 20 15 k factor -2 Gain (dB) 9 4 20 12 8 -30 10 (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm) 0 -100 -40 0 2.1GHz (Band 1) @Low Gain OIP3, IIP3 vs. frequency 20 -80 -10 Pin (dBm) 2.1GHz (Band 1) @Low Gain Pout, IM3 vs. Pin -20 20 P-1dB(IN)=+14.0dBm Pin (dBm) Noise Figure (dB) 60 10 5 -8 (NF: Exclude PCB, Connector Losses) 2 2 2.05 2.1 2.15 2.2 frequency (GHz) 2.25 -9 2.3 0 0 5 10 15 20 frequency (GHz) 8/19 IIP3 (dBm) -10 IDD (uA) Gain Gain (dB) Pout (dBm) (f=2140MHz) 20 Application Note 3 NJG1133MD7 3-5-4. Typical characteristics (Band 1, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 9/19 Application Note 3 NJG1133MD7 3-5-5. Typical characteristics (Band 8, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V 900MHz (Band 8) @High Gain Gain, IDD vs. Pin 900MHz (Band 8) @High Gain Pout vs. Pin (f=942.5MHz) (f=942.5MHz) 10 20 5 18 7 Gain 16 Pout -10 -15 P-1dB(IN)=-8.0dBm -20 -25 -40 -30 -20 -10 0 IDD 14 12 4 10 3 8 2 P-1dB(IN)=-8.0dBm 6 4 -40 10 -20 (f1=942.5MHz, f2=f1+100kHz) -20 OIP3 (dBm) Pout, IM3 (dBm) 22 12 20 10 OIP3 18 -40 -60 8 16 6 14 4 12 2 IIP3 10 IM3 IIP3=+1.3dBm -20 -10 0 -2 8 0 6 900 10 920 940 Pin (dBm) 960 -4 1000 980 frequency (MHz) 900MHz (Band 8) @High Gain NF, Gain vs. frequency 900MHz (Band 8) @High Gain k factor vs. frequency (f=800M~1.1GHz) (f=50M~20GHz) 5 18 4 20 16 15 3 14 2 12 k factor Gain Gain (dB) Noise Figure (dB) 10 (f1=900M~1GHz, f2=f1+100kHz, Pin=-30dBm) Pout -30 0 900MHz (Band 8) @High Gain OIP3, IIP3 vs. frequency 20 -100 -40 -10 Pin (dBm) 900MHz (Band 8) @High Gain Pout, IM3 vs. Pin -80 1 0 -30 Pin (dBm) 0 5 10 NF 5 1 10 (NF: Exclude PCB, Connector Losses) 0 800 850 900 950 1000 frequency (MHz) 1050 8 1100 0 0 5 10 15 20 frequency (GHz) 10/19 IIP3 (dBm) -5 6 IDD (mA) Gain (dB) 0 Pout (dBm) 8 Application Note 3 NJG1133MD7 3-5-6. Typical characteristics (Band 8, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 11/19 Application Note 3 NJG1133MD7 3-5-7. Typical characteristics (Band 8, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V 900MHz (Band 8) @Low Gain Pout vs. Pin 900MHz (Band 8) @Low Gain Gain, IDD vs. Pin (f=942.5MHz) 0 800 10 -2 600 0 -4 Pout -20 -30 400 -6 200 -8 0 IDD -10 P-1dB(IN)=+17.5dBm -40 -50 -40 -30 -20 -10 0 10 P-1dB(IN)=+17.5dBm -12 -14 -40 20 -200 -400 -600 -30 -20 Pin (dBm) -10 0 10 20 Pin (dBm) 900MHz (Band 8) @Low Gain OIP3, IIP3 vs. frequency 900MHz (Band 8) @Low Gain Pout, IM3 vs. Pin (f1=900M~1GHz, f2=f1+100kHz, Pin=-20dBm) (f1=942.5MHz, f2=f1+100kHz) 16 20 24 14 22 OIP3 12 -20 OIP3 (dBm) Pout, IM3 (dBm) 0 Pout -40 -60 IIP3=+14.4dBm -30 -20 10 18 8 16 6 14 IIP3 4 IM3 -80 -100 -40 -10 0 12 2 10 0 900 10 920 940 960 8 1000 980 frequency (MHz) Pin (dBm) 900MHz (Band 8) @Low Gain NF, Gain vs. frequency 900MHz (Band 8) @Low Gain k factor vs. frequency (f=800M~1.1GHz) (f=50M~20GHz) -2 12 -3 10 -4 Gain 8 -5 6 -6 NF 4 -7 2 20 15 k factor 14 Gain (dB) Noise Figure (dB) 20 10 5 -8 (NF: Exclude PCB, Connector Losses) 0 800 850 900 950 1000 frequency (MHz) 1050 -9 1100 0 0 5 10 15 20 frequency (GHz) 12/19 IIP3 (dBm) -10 Gain IDD (uA) Gain (dB) Pout (dBm) (f=942.5MHz) 20 Application Note 3 NJG1133MD7 3-5-8. Typical characteristics (Band 8, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50M~20GHz) S21, S12 (50M~20GHz) 13/19 Application Note 3 NJG1133MD7 3-5-9. Typical characteristics (Band 2, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V 1.9GHz @High Gain Pout vs. Pin 1.9GHz @High Gain Gain, IDD vs. Pin (f=1960MHz) 10 (f=1960MHz) 20 8 5 Gain (dB) Pout (dBm) -5 Pout -10 -15 15 6 10 4 5 -20 IDD (mA) Gain 0 2 IDD -25 P-1dB(IN)=-8.4dBm -30 -20 P-1dB(IN)=-8.4dBm -10 0 0 -40 10 -10 1.9GHz @High Gain Pout, IM3 vs. Pin 1.9GHz @High Gain OIP3, IIP3 vs. frequency 18 0 10 0 Pin (dBm) (f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-30dBm) OIP3 16 Pout OIP3 (dBm) -20 -40 -60 IM3 -80 5 4 17 0 Pout, IM3 (dBm) -20 Pin (dBm) (f1=1960MHz, f2=f1+100kHz) 20 -30 3 2 15 1 14 IIP3 13 0 12 -1 11 -2 IIP3 (dBm) -30 -40 IIP3=+0.6dBm -30 -20 -10 0 1.94 1.96 1.98 frequency (GHz) 1.9GHz @High Gain NF, Gain vs. frequency 1.9GHz @High Gain k factor vs. frequency (f=1.8~2.1GHz) 20 -3 2.00 (f=50MHz~20GHz) 20 18 3.0 Gain 16 2.5 14 2.0 12 10 NF 8 1.0 15 k factor 3.5 NF (dB) 1.92 Pin (dBm) 4.0 1.5 10 1.90 10 Gain (dB) -100 -40 10 5 6 0.5 (Exclude PCB, Connector Losses) 0.0 1.80 1.85 1.90 1.95 2.00 frequency (GHz) 2.05 4 2.10 0 0 5 10 15 20 frequency (GHz) 14/19 Application Note 3 NJG1133MD7 3-5-10. Typical characteristics (Band 2, High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V S11, S22 VSWR S11, S22 (50M~20GHz) S21, S12 Zin, Zout S21, S12 (50M~20GHz) 15/19 Application Note 3 NJG1133MD7 3-5-11. Typical characteristics (Band 2, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V 1.9GHz @Low Gain Pout vs. Pin 1.9GHz @Low Gain Gain, IDD vs. Pin (f=1960MHz) 20 (f=1960MHz) 0 300 Gain 10 -5 200 -10 100 -10 -20 IDD -15 Pout 0 IDD (uA) Gain (dB) Pout (dBm) 0 -30 -20 -100 -40 P-1dB(IN)=+16.6dBm -30 -20 -10 0 10 P-1dB(IN)=+16.6dBm -25 -40 20 -10 0 10 Pin (dBm) 1.9GHz @Low Gain Pout, IM3 vs. Pin 1.9GHz @Low Gain OIP3, IIP3 vs. frequency 16 0 -20 OIP3 (dBm) Pout, IM3 (dBm) -20 Pin (dBm) (f1=1960MHz, f2=f1+100kHz) 20 -30 Pout -40 -60 -200 20 (f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-16dBm) 18 15 17 14 16 13 IIP3 15 12 14 11 13 10 IIP3 (dBm) -50 -40 12 OIP3 IM3 -80 11 9 IIP3=+14.6dBm -100 -40 -30 -20 -10 0 10 8 1.90 20 1.92 Pin (dBm) (f=1.8~2.1GHz) 10 2.00 (f=50MHz~20GHz) 20 -2 -6 6 -8 -10 k factor 8 NF 15 -4 Gain (dB) Gain 10 NF (dB) 1.98 1.9GHz @Low Gain k factor vs. frequency 0 12 4 1.96 frequency (GHz) 1.9GHz @Low Gain NF, Gain vs. frequency 14 1.94 10 5 -12 2 (Exclude PCB, Connector Losses) 0 1.80 1.85 1.90 1.95 2.00 frequency (GHz) 2.05 -14 2.10 0 0 5 10 15 20 frequency (GHz) 16/19 Application Note 3 NJG1133MD7 3-5-12. Typical characteristics (Band 2, Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 17/19 Application Note 3 NJG1133MD7 3-6. Application circuit (Top View) L8 0.9nH RF IN3 (1.9GHz) L7 2.9nH L5 1.6nH RF IN2 (2.1GHz) GND 11 GND RFIN3 10 9 GND 8 RFIN2 13 12 RF IN1 (900MHz) RF OUT3 (1.9GHz) 7 L4 2.4nH L2 8.2nH C4 3pF RFOUT3 1.7GHz Band (1.5GHz Band) Bias Circuit L9 2.9nH RFOUT2 RFIN1 13 C5 0.01uF C2 2pF 6 2.1GHz Band L1 12nH Bias Circuit Logic Circuit VCTL3 RF OUT2 (2.1GHz) L6 2.4nH C3 0.01uF C1 2pF 800MHz Band 14 5 Bias Circuit VCTL3 (RX ATT) RFOUT1 L3 10nH RF OUT1 (900MHz) VDD GND 1 VCTL2 2 VCTL2 (Band Sel2) VCTL1 3 GND 4 VCTL1 (Band Sel1) Parts list Parts ID L1, L2, L4~L9 L3 C1~C5 Comments MURATA LQP03T Series TDK MLK0603 Series MURATA GRM03 Series 18/19 Application Note 3 NJG1133MD7 3-7. Test PCB Layout (Top View) RF IN3 RF OUT3 (1.9GHz) (1.9GHz) L7 C4 L8 RF IN2 (2.1GHz) L4 L5 L9 C5 VDD L6 C2 L3 C3 L2 VDD C1 RF OUT2 (2.1GHz) L1 VCTL3 VCTL2 VCTL1 RF IN1 RF OUT1 (900MHz) (900MHz) PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm) PCB SIZE=35.4mm x 17.0mm CAUTION In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. 19/19