NTE2568 (NPN) & NTE2569 (PNP) Silicon Complementary Transistors High Current Switch TO−220 Full Pack Features: D Low Saturation Voltage D Fast Switching Speed Applications: D Car−Use Inductance Drivers, Lamp Drivers D Inverter Drivers, Converters (Strobes, Flashes, FLT Lighting Circuits) D Power Amplifiers (High−Power Car Stereos, Motor Control) D High−Speed Switching (Switching Regulators, Drivers) Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, PC TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 0.1 mA 0.1 mA Collector Cutoff Current ICBO VCB = 40V, IE = 0 − Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − DC Current Gain hFE VCE = 2V, IC = 1A 70 − 280 fT VCE = 5V, IC = 1A − 100 − MHz VCE(sat) IC = 5A, IB = 0.25A − − 0.4 V Gain Bandwidth Product Collector−Emitter Saturation Voltage Rev. 6−15 Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 80 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = 60 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 − − V − 0.1 − s − 0.5 − s − 0.1 − s Turn−On Time ton Storage Time tstg Collector Current Fall Time tf IC = 5A, IB1 = 20A, IB2 = −20A, VCC = 20V, Pulse Width = 20s, Duty Cycle 1% .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated