2534

NTE2534 (NPN) & NTE2535 (PNP)
Silicon Complementary Transistors
High Current Switch
TO−3P Type Package
Features:
D Low Collector Emitter Saturation Voltage
Applications:
D Relay Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 80V, IE = 0
−
−
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
−
−
0.1
mA
DC Current Gain
hFE1
VCE = 2V, IC = 1A
100
−
280
hFE2
VCE = 2V, IC = 6A
30
−
−
fT
VCE = 5V, IC = 1A
−
20
−
MHz
IC = 6A, IB = 600mA
−
−
0.5
V
−
−
0.4
V
Gain−Bandwidth Product
Collector−Emitter Saturation Voltage
NTE2534
NTE2535
VCE(sat)
Rev. 3−16
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector−Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
90
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = 
80
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
6
−
−
V
−
0.2
−
s
−
0.7
−
s
−
1.7
−
s
−
0.1
−
s
−
0.2
−
s
Turn−On Time
ton
Storage Time
NTE2534
tstg
NTE2535
Fall Time
NTE2534
VCC = 50V,
10IB1 = −10IB2 = IC = 5A,
Pulse Width = 20s,
Duty Cycle  1%, Note 1
tf
NTE2535
Note 1. For NTE2535, the polarity is reversed.
.190 (4.82)
.787
(20.0)
.615 (15.62)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
B
C/
Case
E
.215 (5.47)