MPS4356 Silicon PNP Transistor Audio Amplifier, Switch TO−92

MPS4356
Silicon PNP Transistor
Audio Amplifier, Switch
TO−92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 2
80
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
80
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
5
−
−
V
VCB = 50V, IE = 0
−
−
50
nA
VCB = 50V, IE = 0, TA = +75C
−
−
5
A
−
−
100
nA
VCE = 10V, IC = 100A
25
−
−
VCE = 10V, IC = 1mA
40
−
−
VCE = 10V, IC = 10mA
50
−
250
VCE = 10V, IC = 100mA
40
−
−
VCE = 10V, IC = 500mA
30
−
−
IC = 150mA, IB = 15mA
−
−
0.15
V
IC = 500mA, IB = 50mA
−
−
0.5
V
IC = 150mA, IB = 15mA
−
−
0.9
V
IC = 500mA, IB = 50mA
−
−
1.1
V
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
Output Capacitance
Cob
VCB = 20V, IE = 0, f = 1MHz
−
−
30
pF
Input Capacitance
Cib
VBE = 500mV, f = 1MHz
−
−
110
pF
Small−Signal Current Gain
hfe
IC = 500mA, VCE = 10V, f = 100MHz
1
−
5
Noise Figure
NF
IC = 100mA, VCE = 10V, RS = 1k,
f = 1kHz, BW = 1Hz
−
−
3
dB
Turn−On Time
ton
−
−
100
ns
Turn−Off Time
toff
VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA
−
−
400
ns
Switching Characteristics
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max