NTE56039

NTE56039
TRIAC, 4A Sensitive Gate
Description:
The NTE56039 is a glass passivated TRIAC in a plastic SOT82 type package designed for use in general
purpose bidirectional switching and phase control applications, where high sensitivity is required in all four
quadrants.
Absolute Maximum Ratings:
Repetitive Peak Off−Sate Voltage (Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On−State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Non−Repetitive Peak On−State Current (Full Sine Wave, TJ = +25°C prior to Surge), ITSM
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec
Repetitive Rate−of−Rise of On−State Current after Triggering, dIT/dt
(ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/μs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/μs
MT2 (+), G (−) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/μs
MT2 (−), G (−) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/μs
MT2 (−), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/μs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W
Typical Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Note 1. Although not recommended, off−state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the On−State. The rate−of−rise of current should not exceed
3A/μs.
Rev. 8−12
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
2.5
10
mA
MT2 (+), G (−)
−
4.0
10
mA
MT2 (−), G (−)
−
5.0
10
mA
MT2 (−), G (+)
−
11.0
25
mA
−
3.0
15
mA
MT2 (+), G (−)
−
10
20
mA
MT2 (−), G (−)
−
2.5
15
mA
MT2 (−), G (+)
−
4.0
20
mA
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
IGT
Latching Current
MT2 (+), G (+)
VD = 12V, IT = 0.1A
IL
VD = 12V, IT = 0.1A
Holding Current
IH
VD = 12V, IT = 0.1A
−
2.2
15
mA
On−State Voltage
VT
IT = 5A
−
1.4
1.7
V
VD = 12V, IT = 0.1A
−
0.7
1.5
V
0.25
0.4
−
V
VD = 600V, TJ = +125°C
−
0.1
0.5
mA
VDM = 402V, TJ = +125°C,
Exponential Waveform, Gate Open
−
50
−
V/μs
ITM = 6A, VD = 600V, IG = 0.1A,
dIG/dt = 5A/μs
−
2
−
μs
Gate Trigger Voltage
VGT
VD = 400V, IT = 0.1A, TJ = +125°C
Off−State Leakage Current
ID
Dynamic Characteristics
Critical Rate−of−Rise of
Off−State Voltage
dVD/dt
Gate Controlled Turn−On Time
tgt
.307 (7.8)
Max
.100 (2.54)
See
Note
.147
(3.75)
.118 (3.0)
Min
.437
(11.1)
Max
MT1 MT2
G
.100 (2.54)
.602
(15.3)
Min
.090 (2.29)
.047 (1.2)
Note: Center Pin connected to metal part of mounting surface.