Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UP1868
PNP SILICON TRANSISTOR
LOW SATURATION VOLTAGE
PNP POWER TRANSISTOR

1
FEATURES
SOT-223
* Low saturation voltage with equivalent on-resistance be RCE(SAT)
about 40mΩ at 5A)
* High gain that can be replace parts for power MOSFET.
1
SOT-89


ORDERING INFORMATION
Order Number
Package
UP1868G-AA3-R
UP1868G-AB3-R
SOT-223
SOT-89
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
MARKING
SOT-89
UP1868G
SOT-223
Date Code
1
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R207-015.D
UP1868

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-15
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
IC(PEAK)
-20
A
Continuous Collector Current
IC
-6
A
SOT-223
3
W
Power Dissipation
PC
SOT-89
0.75
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
BVCBO IC=-100µA
-15
Breakdown Voltage (Note)
BVCEO IC=-10mA
-12
BVEBO IE=-100µA
-6
IC=-500mA,IB=-5mA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-2A, IB=-50mA
(Note)
IC=-6A, IB=-250mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-6A, IB=-250mA
Base-Emitter Turn-On Voltage (Note)
VBE(ON) VCE=-1V, IC=-6A
VCB=-12V
Collector Cut-Off Current
ICBO
VCB=-12V,TA=100°C
Emitter Cut-Off Current
IEBO
VEB=-6V
VCE=-1V , IC=-10mA
300
hFE1
hFE2
VCE=-1V , IC=-500mA
300
DC Current Gain (Note)
hFE3
VCE=-1V , IC=-5mA
200
hFE4
VCE=-1V , IC=-10A
150
Current Gain Bandwidth Product
fT
VCE=-10V, IC=-100mA, f=50MHz
Output Capacitance
Cob
VCB=-20V, f=1MHz
tON
IC=-4A, IB1=-400mA
Switching Times
tOFF
IB2=400mA, VCC=-10V
Note: Pulse test: Pulse Width=300μs, Duty Cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX UNIT
V
V
V
-55
-100 mV
-132 -160 mV
-440 mV
-1050 -1200 mV
-950 -1050 mV
-10
nA
-1.0
µA
-10
nA
1000
80
161
120
116
MHz
pF
ns
2 of 4
QW-R207-015.D
UP1868
Saturation Voltage, VCE(SAT)(V)
Saturation Voltage, VCE(SAT) (V)
TYPICAL CHARACTERISTICS
Turn on Voltage vs. Collector Current
Safe Operating Area
1.4
100
VCE=1V
-20
+25
Collector Current, IC(A)
Turn on Voltage, VBE(ON) (V)

PNP SILICON TRANSISTOR
+100
0.7
10
DC
1
1s
10ms
100µs
0.1
0
1m
10m
100m
1
10
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.1
1
10
Collector Emitter Voltage, VCE(V)
3 of 4
QW-R207-015.D
UP1868
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R207-015.D