UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR 1 FEATURES SOT-223 * Low saturation voltage with equivalent on-resistance be RCE(SAT) about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET. 1 SOT-89 ORDERING INFORMATION Order Number Package UP1868G-AA3-R UP1868G-AB3-R SOT-223 SOT-89 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel MARKING SOT-89 UP1868G SOT-223 Date Code 1 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-015.D UP1868 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current IC(PEAK) -20 A Continuous Collector Current IC -6 A SOT-223 3 W Power Dissipation PC SOT-89 0.75 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN BVCBO IC=-100µA -15 Breakdown Voltage (Note) BVCEO IC=-10mA -12 BVEBO IE=-100µA -6 IC=-500mA,IB=-5mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-50mA (Note) IC=-6A, IB=-250mA Base-Emitter Saturation Voltage VBE(SAT) IC=-6A, IB=-250mA Base-Emitter Turn-On Voltage (Note) VBE(ON) VCE=-1V, IC=-6A VCB=-12V Collector Cut-Off Current ICBO VCB=-12V,TA=100°C Emitter Cut-Off Current IEBO VEB=-6V VCE=-1V , IC=-10mA 300 hFE1 hFE2 VCE=-1V , IC=-500mA 300 DC Current Gain (Note) hFE3 VCE=-1V , IC=-5mA 200 hFE4 VCE=-1V , IC=-10A 150 Current Gain Bandwidth Product fT VCE=-10V, IC=-100mA, f=50MHz Output Capacitance Cob VCB=-20V, f=1MHz tON IC=-4A, IB1=-400mA Switching Times tOFF IB2=400mA, VCC=-10V Note: Pulse test: Pulse Width=300μs, Duty Cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT V V V -55 -100 mV -132 -160 mV -440 mV -1050 -1200 mV -950 -1050 mV -10 nA -1.0 µA -10 nA 1000 80 161 120 116 MHz pF ns 2 of 4 QW-R207-015.D UP1868 Saturation Voltage, VCE(SAT)(V) Saturation Voltage, VCE(SAT) (V) TYPICAL CHARACTERISTICS Turn on Voltage vs. Collector Current Safe Operating Area 1.4 100 VCE=1V -20 +25 Collector Current, IC(A) Turn on Voltage, VBE(ON) (V) PNP SILICON TRANSISTOR +100 0.7 10 DC 1 1s 10ms 100µs 0.1 0 1m 10m 100m 1 10 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 1 10 Collector Emitter Voltage, VCE(V) 3 of 4 QW-R207-015.D UP1868 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R207-015.D