UNISONIC TECHNOLOGIES CO., LTD MMDT8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat) = 40mV (typ.) @ IC / IB = 50mA / 2.5mA * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Package MMDT8050SG-AL6-R SOT-363 Pin Assignment 1 2 3 4 5 6 E1 B1 C2 E2 B2 C1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-012.D MMDT8050S NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 700 mA Collector Current (Pulse) ICP 1.5 (Note 2) A Power Dissipation PD 200 (total) mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Single pulse, PW=10ms ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL TEST CONDITIONS BVCBO IC = 100μA, IE = 0 BVCEO IC = 1mA, IB = 0 BVEBO IE = 100μA, IC =0 ICBO VCB = 30V,IE = 0 IEBO VEB = 5V, IC = 0 hFE1 VCE = 1V, IC = 1mA DC Current Gain(note) hFE2 VCE = 1V, IC = 150 mA hFE3 VCE = 1V, IC = 500mA Collector-Emitter Saturation Voltage VCE(SAT) IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) VCE = 1V, IC = 10mA Current Gain Bandwidth Product fT VCE = 10V, IC = 50mA Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz Note: Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 30 20 5 TYP 100 120 40 MAX UNIT V V V 1 uA 100 nA 400 0.5 1.2 1.0 100 9.0 V V V MHz pF 2 of 3 QW-R218-012.D MMDT8050S NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R218-012.D