NTE5688

NTE5688, NTE5689, NTE5690
TRIAC - 40Amp, 1/2” Press Fit
Absolute Maximum Ratings:
Repetitive Peak Off-State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM
NTE5688 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5689 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5690 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On-State Current (TC = +80°C, Conduction Angle = 360°), IT(RMS) . . . . . . . . . . . . . . . . . . . 40A
Non-Repetitive Peak Surge On-State Current (One-Cycle, at 50Hz or 60Hz), ITSM . . . . . . . . 400A
Peak Gate-Trigger Current (for 3μs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak Gate-Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate-Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W Typ
Electrical Characteristics: (At Specified Case Temperature)
Peak Off-State Current, IDRM
(Gate Open, TC = +110°C, VDRM = Max Rating, Note 1) . . . . . . . . . . . . . . . . . . . . . . 1mA Max
Maximum On-State Voltage (TC = +25°C, IT = 40A, Note 1), VTM . . . . . . . . . . . . . . . . . . . . 2.0V Max
DC Holding Current (Gate Open, TC = +25°C, Note 1), IHold . . . . . . . . . . . . . . . . . . . . . . . 60mA Max
Critical Rate-of-Rise of Off-State Voltage, Critical dv/dt
(VD = VDRM, Gate Open, TC = +110°C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/μs
Critical rate-of-Rise of commutation Voltage, Commutating dv/dt
(VD = VDRM, IT = 40A, Gate Unenergized, TC = +80°C, Note 1) . . . . . . . . . . . . . . . . . . . 3V/μs
DC Gate-Trigger Current (VD = 12VDC, RL = 30Ω, TC = +25°C), IGT
(T2+ Gate +, T2- Gate -) Quads I and III . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max
(T2+ Gate -, T2- Gate +) Quads II and IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Max
DC Gate-Trigger Voltage (VD = 12VDC, RL = 30Ω, TC = +25°C), VGT . . . . . . . . . . . . . . . . 2.5V Max
Gate-Controlled Turn-On Time, Tgt
(VD = 400V, IGT = 200mA, tR = 0.1μs, IT = 10A (Peak), TC = +25°C) . . . . . . . . . . . . . . . . . 3μs
Note 1. All values apply in either direction.
Gate
MT1
MT2
.610 (15.49) Max
.650
(16.5)
Max
.385
(9.76)
Max
.508 (12.9) Max