NTE5517

NTE5517 thru NTE5519
Silicon Controlled Rectifier (SCR)
35 Amp, 1/2” Press Fit
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM
NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Reverse Voltage (TJ = +100°C), VRRM
NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On−State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 350A
Peak Gate−Trigger Current (3μs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak Gate−Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate−Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Operating Temperatue Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C
Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9°C/W
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Peak Off−State Current
IDRM,
IRRM
TJ = +100°C, Gate Open,
VDRM and VRRM = Max. Rating
−
−
2.0
mA
Maximum On−State Voltage (Peak)
VTM
TC = +25°C
−
−
1.6
V
Peak On−State Current
ITM
−
−
70
A
DC Holding Current
IH
TC = +25°C, Gate Open
−
−
50
mA
DC Gate−Trigger Current
IGT
Anode Voltage = 12V, RL = 30Ω, TC = +25°C
−
−
25
mA
DC Gate−Trigger Voltage
VGT
Anode Voltage = 12V, RL = 30Ω, TC = +25°C
−
−
2.0
V
td + tr, IGT = 150mA
−
2.5
−
μs
TC = +100°C, Gate Open
−
100
−
V/μs
Gate Controlled Turn−On Time
Critical Rate−of−Rise of
Off−State Voltage
tgt
Critical
dv/dt
.155 (3.93) Max
Cathode
Gate
.085
(2.15)
.063 (1.6)
.767
(19.5)
Max
.380
(9.65)
Max
.475 (12.09)
Max
Anode
.505 (12.85)
Max