SW70N10 N-channel Enhanced mode TO251S MOSFET Features TO251S BVDSS : 100V ID High ruggedness Low RDS(ON) (Typ12.5mΩ)@VGS=10V Low Gate Charge (Typ 130nC) Improved dv/dt Capability 100% Avalanche Tested Application:Telecom,Computer, Inverter : 70A RDS(ON) : 12.5mΩ @VGS=10V 1 2 2 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW SI 70N10 SW70N10 TO251S TUBE Value Unit 100 V 70* A 44* A 280 A ± 20 V Absolute maximum ratings Symbol VDSS ID Parameter Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 263 mJ EAR Repetitive avalanche energy (note 1) 48 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns 227 W 1.8 W/oC -55 ~ + 150 oC 300 oC Value Unit PD TSTG, TJ TL (note 1) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case 0.55 oC/W Rthja Thermal resistance, Junction to ambient 82.1 oC/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 1/6 SW70N10 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 100 V V/oC 0.09 VDS=100V, VGS=0V 1 uA VDS=80V, TC=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 3.0 V IGSS On characteristics VGS(TH) Gate threshold voltage RDS(ON) Drain to source on state resistance Gfs Forward transconductance VDS=VGS, ID=250uA 1.5 VGS=10V, ID=12A 11.8 14.5 mΩ VGS=4.5V, ID=12A 12.8 15 mΩ VDS =10V, ID=12A 55 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 352 td(on) Turn on delay time 28 tr td(off) tf Qg Rising time Turn off delay time 5734 VGS=0V, VDS=25V, f=1MHz 319 pF 86 VDS=50V, ID=70A, RG=25Ω (note 4,5) ns 380 Fall time 148 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 130 VDS=80V, VGS=10V, ID=70A (note 4,5) 17 nC 43 Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 70 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 280 A Diode forward voltage drop. IS=70A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=70A, VGS=0V, dIF/dt=100A/us 41 ns 82 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 0.6mH, IAS = 30A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 70A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 2/6 SW70N10 Fig. 1. On-state characteristics Fig. 3. Gate charge characteristics Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 6. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 3/6 SW70N10 Fig. 8. Capacitance Characteristics Fig. 7. Maximum safe operating area Fig. 9. Transient thermal response curve Fig. 10. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS VGS QGS QGD DUT 5mA Charge(nC) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 4/6 SW70N10 Fig. 11. Switching time test circuit & waveform VDS RL RGS 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 12. Unclamped Inductive switching test circuit & waveform Fig. 13. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 5/6 SW70N10 DISCLAIMER * All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to [email protected] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 6/6