SAMWIN SW6016 N-channel SOP-8 MOSFET BVDSS : 60V SOP-8 Features ID ■ High ruggedness ■ RDS(ON) (Max 12mΩ)@VGS=10V ■ Gate Charge (Typical 69nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 8A RDS(ON) : 12mΩ General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and LCD/LED back light，etc. Order Codes Item Sales Type Marking Package Packaging 1 SWS 6016 SW 6016 SOP-8 REEL Absolute maximum ratings Symbol VDSS ID Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Unit 60 V 8* A 5* A 32 A ± 20 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 123 mJ EAR Repetitive Avalanche Energy (note 1) 10 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns 2.3 W 0.018 W/oC -55 ~ + 150 oC Value Unit 54.4 oC/W PD TSTG, TJ (note 1) Value Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature *. Drain current is limited by junction temperature. Thermal characteristics Symbol Rthja Parameter Thermal resistance, Junction to ambient（note） Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's board design. 54.4 oC/W on a 1 in2 pad of 2oz copper. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2015. Rev. 2.0 1/5 SAMWIN SW6016 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 60 V V/oC 0.06 VDS=60V, VGS=0V 1 uA VDS=48V, TC=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 2.5 V VGS=10V, ID = 4A 12 mΩ VGS=4.5V, ID = 4A 15 mΩ On characteristics VGS(TH) Gate threshold voltage RDS(ON) Drain to source on state resistance Gfs Forward Transconductance VDS=VGS, ID=250uA 1.2 VDS=10V, ID = 4A 16 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 222 td(on) Turn on delay time 17 tr td(off) tf Qg Rising time Turn off delay time 2667 VGS=0V, VDS=25V, f=1MHz 235 pF 40 VDS=30V, ID=8A, RG=25Ω (note 4，5) ns 6 Fall time 17 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 69 VDS=48V, VGS=10V, ID=8A (note 4，5) 8 nC 22 Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM Test conditions Min. Typ. Max. Unit 8 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 32 A VSD Diode forward voltage drop. IS=8A, VGS=0V 1.2 V Trr Reverse recovery time Qrr Breakdown voltage charge IS=8A, VGS=0V, dIF/dt=100A/us 30 ns 36 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 4mH, IAS = 8A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 8A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2015. Rev. 2.0 2/5 SAMWIN Fig. 1. On-state characteristics Fig. 3. Gate charge characteristics Fig 5. Breakdown Voltage Variation vs. Junction Temperature SW6016 Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 6. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2015. Rev. 2.0 3/5 SAMWIN SW6016 Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Capacitance Characteristics Fig. 10. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGS QGD DUT VGS 2.5mA Charge Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. nC Jan. 2015. Rev. 2.0 4/5 SAMWIN SW6016 Fig. 11. Switching time test circuit & waveform VDS RL RGS 90% VDS VDD 10VIN DUT 10% 10% VIN td(on) td(off) tr tON tf tOFF Fig. 12. Unclamped Inductive switching test circuit & waveform Fig. 13. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2015. Rev. 2.0 5/5