SW10N70K

SW10N70K
N-channel Enhanced mode TO-220F/TO-252 MOSFET
Features






TO-220F
BVDSS : 700V
TO-252
ID
High ruggedness
Low RDS(ON) (Typ 0.36Ω)@VGS=10V
Low Gate Charge (Typ 29nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,LED,TV-Power
: 10A
RDS(ON) : 0.36Ω
12
12
3
2
3
1
1. Gate 2. Drain 3. Source
General Description
3
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW F 10N70K
SW10N70K
TO-220F
TUBE
2
SW D 10N70K
SW10N70K
TO-252
REEL
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220F
Drain to source voltage
TO-252
Unit
700
V
Continuous drain current
(@TC=25oC)
10*
A
Continuous drain current
(@TC=100oC)
6.3*
A
40
A
± 30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
120
mJ
EAR
Repetitive avalanche energy
(note 1)
15
mJ
dv/dt
Peak diode recovery dv/dt
(note 3)
5
V/ns
PD
TSTG, TJ
TL
(note 1)
Total power dissipation
Derating factor above
(@TC=25oC)
25oC
25.5
240.4
W
0.2
1.9
W/oC
Operating junction temperature & storage temperature
-55 ~ + 150
oC
300
oC
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220F
TO-252
0.5
Rthjc
Thermal resistance, Junction to case
4.9
Rthja
Thermal resistance, Junction to ambient
48.7
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
oC/W
oC/W
May. 2016. Rev. 4.0
1/6
SW10N70K
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
700
V
V/oC
0.65
VDS=700V, VGS=0V
VDS=560V,
TC=125oC
1
uA
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
5
V
0.42
Ω
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=5A
0.36
Forward transconductance
VDS=30V, ID=5A
7
Gfs
2
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
3.9
td(on)
Turn on delay time
16
tr
td(off)
tf
Qg
Rising time
Turn off delay time
1015
VGS=0V, VDS=200V, f=1MHz
40
VDS=350V, ID=10A, VGS=10V,
RG=25Ω
(note 4,5)
pF
34
ns
55
Fall time
27
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
29
VDS=560V, VGS=10V, ID=10A
(note 4,5)
7
nC
14
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=10A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=10A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
10
A
40
A
1.4
V
266
ns
3.6
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 60mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 4.0
2/6
SW10N70K
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown voltage variation
vs. junction temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On-state current vs. diode
forward voltage
Fig. 6. On-resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 4.0
3/6
SW10N70K
Fig. 7. Maximum safe operating area(TO-220F)
Fig. 8. Maximum safe operating area(TO-252)
Fig. 9. Capacitance Characteristics
Fig. 10. Transient thermal response curve(TO-220F)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 4.0
4/6
SW10N70K
Fig. 11. Transient thermal response curve(TO-252)
Fig. 12. Gate charge test circuit & waveform
Fig. 13. Switching time test circuit & waveform
VDS
RL
90%
VDS
VDD
VIN
10VIN
RGS
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
May. 2016. Rev. 4.0
5/6
SW10N70K
Fig. 14. Unclamped Inductive switching test circuit & waveform
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
+ V
DS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 4.0
6/6