SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 BVDSS : 600V TO-252 : 4A ID High ruggedness RDS(ON) (Typ 2.0Ω)@VGS=10V Gate Charge (Typ 17nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED,Charge RDS(ON) : 2.0Ω 1 1 2 3 2 2 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW I 4N60DC SW4N60DC TO251 TUBE 2 SW D 4N60DC SW4N60DC TO252 TUBE Absolute maximum ratings Symbol VDSS ID Value Parameter TO-251 Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC =100oC) TO-252 Unit 600 V 4* A 2.5* A 16 A ±30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 170 mJ EAR Repetitive Avalanche Energy (note 1) 25 mJ (note 3) 5 V/ns dv/dt PD TSTG, TJ TL (note 1) Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above =25oC) 25oC 147 147 W 1.17 1.17 W/oC Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC 300 oC Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink Rthja Thermal resistance, Junction to ambient Value TO-251 TO-252 0.85 0.85 Unit oC/W oC/W oC/W 87 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 1/6 SW4N60DC Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 600 V VDS=610V, VGS=0V VDS=488V, TC V/oC 0.5 =125oC 1 uA 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 2.2 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 2A Forward Transconductance VDS = 30 V, ID = 2A Gfs 2.5 2 3.3 S Dynamic characteristics 586 Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 7.6 td(on) Turn on delay time 12 tr td(off) tf Qg Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz 71 pF 27 VDS=300V, ID=4A, RG=25Ω (note 4,5) ns 33 Fall time 25 17 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=480V, VGS=10V, ID=4A (note 4,5) 8 nC 5 Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit 4 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 16 A VSD Diode forward voltage drop. IS=4A, VGS=0V 1.5 V Trr Reverse recovery time Qrr Reverse recovery Charge IS=4A, VGS=0V, dIF/dt=100A/us IS Continuous source current ISM 366 ns 1.9 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 21mH, IAS = 4A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 2/6 SW4N60DC Fig. 1. On-state characteristics Fig. 3. Gate charge characteristics Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 6. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 3/6 SW4N60DC Fig. 7. Maximum safe operating area（TO-251） Fig. 8. Transient thermal response curve （TO-251） Fig. 9. Maximum safe operating area（TO-252） Fig. 10. Transient thermal response curve （TO-252） Fig. 11. Capacitance Characteristics Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 4/6 SW4N60DC Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGD QGS DUT VGS 1mA Charge nC Fig. 13. Switching time test circuit & waveform VDS RL RGS VDS VDD VIN 10VIN 90% DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 5/6 SW4N60DC Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIRATION: * All the data&curve within this document was tested in XI’AN SEMIPOWER TESTING&APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification Standards can also be found on the Web site (http://www.semipower.com.cn) * Any advice, please send your proposal to [email protected] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 6/6