UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 ORDERING INFORMATION Order Number Lead Free 2SA1837L-TF3-T 2SA1837L-TF1-T 2SA1837L-TF2-T Note: Pin Assignment: B: Base Package Halogen-Free 2SA1837G-AA3-T SOT-223 2SA1837G-TF3-T TO-220F 2SA1837G-TF1-T TO-220F1 2SA1837G-TF2-T TO-220F2 C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tape Reel Tube Tube Tube MARKING SOT-223 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd TO-220 / TO-220F1 / TO-220F2 1 of 4 QW-R219-002.E 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current TA=25°C Collector Power Dissipation TC=25°C SYMBOL VCBO VCEO VEBO IC IB SOT-223 TO-220F TO-220F1 TO-220F2 SOT-223 TO-220F TO-220F1 TO-220F2 RATINGS -230 -230 -5 -1 -0.1 1 UNIT V V V A A W 2 W 15 W 20 W PC Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ 150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL BVCEO ICBO IEBO hFE VCE(SAT) VBE (SAT) fT Cob UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC= -10mA, IB=0 VCB = -230V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -100mA IC= -500mA, IB= -50mA VCE= -5V, IC= -500mA VCE= -10V, IC= -100mA VCB= -10V, IC=0, f=1MHz MIN TYP MAX UNIT -230 V -1.0 μA -1.0 μA 100 320 -1.5 V -1.0 V 70 MHz 30 pF 2 of 4 QW-R219-002.E 2SA1837 TYPICAL CHARACTERISTICS 300 COMMON EMITTER VCE= -10V TC =25°C Collector Current, IC (A) Transition Frequency, fT (MHz) Transition Frequency vs. Collector Current 500 100 50 30 Collector Current vs. Base-Emitter Voltage -1.0 COMMON EMITTER -0.8 VCE= -5V -0.6 TC =100°C 25 -25 -0.4 -0.2 0 -30 -100 -5 -10 -300 -1000 Collector Current, IC (mA) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base-Emitter Voltage, VBE (V) Collector-Emitter Saturation Voltage, VCE (sat) (V) 10 DC Current Gain, hFE PNP EPITAXIAL SILICON TRANSISTOR Collector Current vs. Collector-Emitter Voltage -1.0 -20 -10 -8 -0.8 -6 -0.6 -4 -0.4 IB = -2mA COMMON EMITTER TC =25°C -0.2 0 0 -10 -2 -8 -4 -6 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Safe Operating Area -5 -3 IC MAX. (PULSED) 1ms 10ms IC MAX. 100ms -1 (CONTINUOUS) -0.5 -0.3 DC OPERATION -0.1 -0.05 -0.03 -0.01 SINGLE NONREPETITIVE PULSE TC =25 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. -100 -300 -10 -30 -1 -3 Collector-Emitter Voltage, VCE (V) 3 of 4 QW-R219-002.E 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R219-002.E