UNISONIC TECHNOLOGIES CO., LTD 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION * Humidifier, DC-DC converter and general purpose. ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC3835L-x-T3P-T 2SC3835G-x-T3P-T TO-3P TO-3PN 2SC3835L-x-T3N-T 2SC3835G-x-T3N-T Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R214-002.B 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 8 V Base Current IB 3 A Collector Current 7 A IC Collector Current (PULSE) 14 A Collector Power Dissipation (TC=25°C ) PC 70 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range and assured by design from –20°C ~85°C. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Turn-on Time Storage Time Fall Time TEST CONDITIONS IC= 50mA VCB=200V, IE=0 VEB=8V, IC=0 VCE=4V, IC=3A IC=3A , IB=0.3A IC=3A , IB=0.3A VCE=12V, IE=-0.5mA VCB=10V, IE= 0 A, f=1MHz See specified Test Circuit MIN 120 TYP MAX 100 100 220 0.5 1.2 70 30 110 0.5 3.0 0.5 UNIT V μA μA V V MHz pF µS µS µS CLASSIFICATION of hFE RANK RANGE A 70-130 B 120-170 C 160-220 TYPICAL SWITCHING CHARACTERISTICS (Common Emitter) VCC (V) 50 RL (Ω) 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.6 IB1 IB2 SYMBOL BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT COB tON tSTG tf UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R214-002.B 2SC3835 TYPICAL CHARACTERISTICS Collector Current vs. Collector-Emitter Voltage mA 200 A 150m A 100m A 60m A 40m 5 4 2 IB=10mA 1 0 0 Collector Current vs. Base-Emitter Voltage Temperature -30 2 (Tc) 3 25 (Tc ) 4 (Tc ) 5 1 0 0.5 1.0 1.1 Base-Emitter Voltage, VBE (V) 50 20 0.02 0.1 0.5 1 Collector Current, Ic (A) 5 7 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 20 10 0 -0.01 300 DC Current Gain, hFE 100 1 -0.05-0.1 -0.5 -1 -5 Emitter Current, IE (A) DC Current Gain vs. Collector Current 200 VCE=4V Typ 0.5 0.05 0.1 Base Current, IB (A) Cut- off Frequency vs. Emitter Current 30 VCE=12V Cut- off Frequency, fT (MH Z) 6 0 0 0.0050.01 1 2 3 4 Collector-Emitter Voltage, VCE (V) 125 Collector Current, Ic (A) 7 1 5A A 20m 3A 3 2 I C=1A Collector Current, Ic (A) 6 Collector-Emitter Saturation Voltage vs. Base Current 2.6 Collector-Emitter Saturation Voltage, VCE(sat) (V) 7 DC Current Gain, hFE NPN EPITAXIAL SILICON TRANSISTOR DC Current Gain vs. Collector Current Temperature VCE=4V 125 100 50 20 0.01 25 -30 0.050.1 0.5 1 Collector Current, Ic (A) 57 3 of 4 QW-R214-002.B 2SC3835 TYPICAL CHARACTERISTICS (Cont.) Safe Operating Area (Single Pulse) Transient Thermal Resistance vs. Time 20 Collector Current, Ic (A) 1 0.5 0.4 1 10 5 1 0.5 0.1 100 10 Time, t (ms) 1000 2000 10 0m s s 10m Transient Thermal Resistance, θj-a (C/W) 5 0.05 5 Without Healstink Natural Cooling 10 50 120 200 Collector-Emitter Current, VCE (A) i te fi n In ink i th ts W He a Maximum Power Dissipation, Pc (W) NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R214-002.B