Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SC5027
NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY

FEATURES
* High Voltage (VCEO = 800V)
* High Speed Switching
* Wide SOA

ORDERING INFORMATION
Order Number
Package
Lead Free
Halogen Free
2SC5027L-x-TA3-T
2SC5027G-x-TA3-T
TO-220
2SC5027L-x-TF3-T
2SC5027G-x-TF3-T
TO-220F
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
850
V
Collector-Emitter Voltage
VCEO
800
V
Collector-Emitter Voltage
VEBO
7
V
Peak Collector Current
IC
3
A
Collector Current (Pulse)
ICP
10
A
Base Current
IB
1.5
A
Power Dissipation
PC
50
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TC= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time

SYMBOL
TEST CONDITIONS
BVCBO
IC=1mA, IE=0
BVCEO
IC=5mA, IB=0
BVEBO
IE=1mA, IC=0
IC=1.5A, IB1= -IB2=0.3A
VCEX(SUS)
L=2mH, Clamped
ICBO
VCB=800V, IE=0
IEBO
VEB=5V, IC=0
hFE1
VCE=5V, IC=0.2A
hFE 2
VCE=5V, IC=1A
VCE (SAT) IC=1.5A, IB=0.3A
VBE (SAT) IC=1.5A, IB=0.3A
Cob
VCB=10V, f=1MHz, IE=0
fT
VCE=10V, IC=0.2A
tON
VCC=400V
IC=5IB1= -2.5IB2=2A
tS
RL=200Ω
tF
MIN
850
800
7
TYP
MAX
800
UNIT
V
V
V
V
10
8
10
10
40
μA
μA
2
1.5
V
V
pF
MHz
μs
μs
μs
60
15
0.5
3
0.3
CLASSIFICATION of hFE1
RANK
RANGE
N
10 ~ 20
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
R
15 ~ 30
O
20 ~ 40
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TIME, tON, tstg, tF (μs)
TYPICAL CHARACTERISTICS
Collector Current, Ic (A)
Saturation Voltage, VCE(SAT) (V)
Collector Current, IC (A)

NPN SILICON TRANSISTOR
0
10
s
D
C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
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
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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