UNISONIC TECHNOLOGIES CO., LTD 2SC5353B HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION NPN SILICON TRANSISTOR 1 1 TO-220 TO-220F FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V TO-126C 1 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. 1 TO-126 SYMBOL 2.Collector 1 1 TO-251 TO-220F1 1 TO-252 1.Base 3.Emitter ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC5353BL-T60-K 2SC5353BG-T60-K TO-126 2SC5353BL-T6C-K 2SC5353BG-T6C-K TO-126C 2SC5353BL-TA3-T 2SC5353BG-TA3-T TO-220 2SC5353BL-TF3-T 2SC5353BG-TF3-T TO-220F 2SC5353BL-TF1-T 2SC5353BG-TF1-T TO-220F1 2SC5353BL-TM3-T 2SC5353BG-TM3-T TO-251 2SC5353BL-TN3-R 2SC5353BG-TN3-R TO-252 Note: Pin Assignment: E: Emitter B: Base C: Collector www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 B C E B C E B C E B C E B C E B C E B C E Packing Bulk Bulk Tube Tube Tube Tube Tape Reel 1 of 5 QW-R203-035.E 2SC5353B NPN SILICON TRANSISTOR MARKING TO-220 / TO-220F TO-220F1 / TO-251 / TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TO-126 / TO-126C 2 of 5 QW-R203-035.E 2SC5353B NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 900 V Collector-Emitter Voltage VCEO 750 V Emitter-Base Voltage VEBO 7 V DC IC 3 A Collector Current 5 A Pulse ICP Base Current IB 1 A TO-126/TO-126C 20 W TO-220F/TO-220F1 Power Dissipation PD TO-220 25 W TO-251/TO-252 22 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage TEST CONDITIONS IC=1 mA, IE = 0 IC=10 mA, IB = 0 VCB=720V, IE= 0 VEB=7V, IC= 0 VCE=5 V, IC=1 mA VCE=5 V, IC=0.15 A IC=1.2 A, IB=0.24 A IC=1.2 A, IB=0.24 A tR MIN 900 750 TYP MAX UNIT V V 100 µA 10 µA 10 15 1.0 1.3 V V 0.7 µS 4.0 µS 0.5 µS IB1 Rise Time SYMBOL BVCBO BVCEO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) 300Ω PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Switching Time Storage Time Fall Time tSTG tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IB2 3 of 5 QW-R203-035.E 2SC5353B NPN SILICON TRANSISTOR Collector Current, IC (A) Collector Current, IC (A) TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs. Collector Current DC Current Gain vs. Collector Current 10 Collector-Emitter Saturation Voltage, VCE (SAT) (V) DC Current Gain, hFE 1000 100 TC=100℃ 25 10 -20 Common emitter VCE = 5 V 1 0.001 0.01 0.1 1 Collector Current, IC (A) 1 0.1 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Common emitter IC/IB = 3 0.05 0.01 TC=100℃ 25 -20 0.1 1 Collector Current, IC (A) 10 4 of 5 QW-R203-035.E 2SC5353B NPN SILICON TRANSISTOR Collector Current, IC (A) Collector Power Dissipation, PD (W) TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R203-035.E