UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ORDERING INFORMATION Order Number Lead Free Halogen Free TIP35CL-x-T3P-T TIP35CG-x-T3P-T TIP35CL-x-T3N-T TIP35CG-x-T3N-T www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-3P TO-3PN Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 1 of 4 QW-R214-013.C TIP35C NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE = 0) VCBO 100 V Collector-Emitter Voltage (IB = 0) VCEO 100 V Emitter-Base Voltage (IC = 0) VEBO 5 V Collector Current IC 25 A Collector Peak Current ICM 50 A Base Current IB 5 A Total Dissipation (TC =25 °C) PD 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Case SYMBOL θJC MIN TYP UNIT °C/W ELECTRICAL CHARACTERISTICS (Tc =25°C, unless otherwise specified) PARAMETER Collector Cut-off Current (IE = 0) SYMBOL ICBO TEST CONDITIONS VCB = 100 V Emitter Cut-off Current (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0) IEBO V(BR)CEO Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Voltage VBE(ON) hFE1 hFE2 fT VEB = 5 V IC = 50 mA IB = 1.5 A, IC = 15 A IB = 5 A, IC = 25 A VCE = 5 V, IC = 5 A VCE = 5 V, IC = 1.5 A VCE = 4 V, IC = 15 A VCE = 5 V, IC = 1 A DC Current Gain Transition Frequency MAX 1 MIN TYP MAX UNIT 10 μA 10 100 55 15 3 1.8 4 1.5 160 μA V V V V MHz CLASSIFICATION OF hFE1 RANK RANGE R 55~110 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw O 80~160 2 of 4 QW-R214-013.C TIP35C TYPICAL CHARACTERISTICS Collector Current vs. Collector-Base Voltage 10 8 6 4 2 0 50 40 30 20 10 0 200 100 300 400 500 Collector-Base Voltage, VCBO (V) 0 Emitter Current vs. Emitter-Base Voltage 12 0 Collector Current, IC (A) 8 6 4 120 150 180 30 60 90 Collector-Emitter Voltage, VCEO (V) Collector Current vs. Collector-Emitter Voltage 0.3 10 VCE=5V, IC=0.2A 0.25 IB=1.46mA 0.2 0.15 0.1 0.05 2 0 Collector Current vs. Collector-Emitter Voltage 60 Collector Current, IC (mA) Collector Current, IC (uA) 12 Emitter Current, IE (uA) NPN SILICON TRANSISTOR 0 12 16 4 8 Emitter-Base Voltage, VEBO (V) 20 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE (V) Collector Current vs. Collector-Emitter Voltage 18 VCE=4V, IC=15A 15 IB=131.5mA 12 9 6 3 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R214-013.C TIP35C NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R214-013.C