SKiiP 26GH12T4V11 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP® 2 H-bridge inverter SKiiP 26GH12T4V11 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Typical Applications* V 90 A 73 A 70 A 210 A -20 ... 20 V 10 µs -40 ... 175 °C Ts = 25 °C 83 A Ts = 70 °C 66 A 75 A Tj = 150 °C Inverse - Diode IF Tj = 175 °C IFnom Features 1200 IFRM IFRM = 3 x IFnom 225 A IFSM 10 ms, sin 180°, Tj = 150 °C 430 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C, 20A per spring Tstg Visol AC sinus 50Hz, t = 1 min • Single phase inverter Characteristics Remarks Symbol • Case temperature limited to TC=125°C max.; TC = TS (valid for baseplateless modules) • Product reliability results valid for Tj≤150°C (recommended Top=-40...+150°C) Inverter - IGBT IC = 70 A VCE(sat) VGE = 15 V chiplevel VCE0 chiplevel Conditions min. Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 15 17 m VGE = VCE, IC = 2 mA ICES VGE = 0 V VCE = 1200 V Cres QG - 8 V...+ 15 V RGint Tj = 25 °C td(on) Eoff VCC = 600 V IC = 75 A RG on = 9.1 RG off = 9.1 di/dton = 1820 A/µs di/dtoff = 900 A/µs VGE = +15/-15 V Rth(j-s) per IGBT tr Eon td(off) tf V Unit VGE(th) VCE = 25 V VGE = 0 V 2500 max. VGE = 15 V chiplevel Coes A °C typ. rCE Cies 100 -40 ... 125 Tj = 150 °C 22 24 m 5.8 6.5 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 3.90 nF f = 1 MHz 0.31 nF f = 1 MHz 0.23 nF 400 nC 5 mA Tj = 150 °C 0.00 26 ns Tj = 150 °C 36 ns Tj = 150 °C 9.5 mJ Tj = 150 °C 320 ns Tj = 150 °C 175 ns Tj = 150 °C 7.1 mJ 0.55 K/W GH © by SEMIKRON Rev. 0 – 14.10.2013 1 SKiiP 26GH12T4V11 Characteristics Symbol Conditions Inverse - Diode VF = VEC IF = 75 A VGE = 0 V chiplevel VF0 chiplevel rF MiniSKiiP® 2 H-bridge inverter SKiiP 26GH12T4V11 IRRM Qrr Err Rth(j-s) chiplevel min. typ. max. Unit Tj = 25 °C 2.2 2.5 V Tj = 150 °C 2.1 2.4 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 12 13 m 16 18 m Tj = 150 °C IF = 75 A Tj = 150 °C di/dtoff = 2120 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per Diode 80 A 13.3 µC 5.6 mJ 0.75 K/W Module Ms to heat sink w Features Temperature Sensor • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 R100 Tr=100°C (R25=1000) R(T) R(T)=1000[1+A(T-25°C)+B(T-25°C)2 ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 2 2.5 Nm 55 g 1670 ± 3% Typical Applications* • Single phase inverter Remarks • Case temperature limited to TC=125°C max.; TC = TS (valid for baseplateless modules) • Product reliability results valid for Tj≤150°C (recommended Top=-40...+150°C) GH 2 Rev. 0 – 14.10.2013 © by SEMIKRON SKiiP 26GH12T4V11 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 14.10.2013 3 SKiiP 26GH12T4V11 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 14.10.2013 © by SEMIKRON SKiiP 26GH12T4V11 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 14.10.2013 5