SKiiP 26GB07E3V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C 650 V Ts = 25 °C 229 A Ts = 70 °C 183 A 200 A ICnom ICRM MiniSKiiP® 2 Dual VGES tpsc Tj ICRM = 3 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V 600 A -20 ... 20 V 6 µs -40 ... 175 °C Ts = 25 °C 235 A Ts = 70 °C 184 A 200 A Tj = 150 °C Inverse - Diode SKiiP 26GB07E3V1 IF Tj = 175 °C IFnom Features • 650V Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 • NTC T-Sensor IFRM IFRM = 2 x IFnom 400 A IFSM 10 ms, sin 180°, Tj = 150 °C 1224 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C, 20 A per spring Tstg Visol AC sinus 50 Hz, t = 1 min 200 A -40 ... 125 °C 2500 V Characteristics Remarks • Max. case temperature limited to TC= 125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) Symbol Conditions Inverter - IGBT IC = 200 A VCE(sat) VGE = 15 V chiplevel VCE0 chiplevel min. typ. max. Unit Tj = 25 °C 1.45 1.85 V Tj = 150 °C 1.70 2.10 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.82 0.9 V Tj = 25 °C 2.8 4.3 mΩ rCE VGE = 15 V chiplevel VGE(th) VGE = VCE, IC = 3.2 mA ICES VGE = 0 V VCE = 650 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 4.4 6 mΩ 5.8 6.5 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 12.32 nF f = 1 MHz 0.77 nF mA f = 1 MHz QG - 8 V...+ 15 V RGint Tj = 25 °C VCC = 300 V Tj = 150 °C IC = 200 A Tj = 150 °C RG on = 4 Ω Tj = 150 °C RG off = 4 Ω di/dton = 4095 A/µs Tj = 150 °C di/dtoff = 3935 A/µs Tj = 150 °C du/dt = 5020 V/µs VGE = +15/-8 V Tj = 150 °C Ls = 25 nH per IGBT, λpaste=0.8 W/K*m td(on) tr Eon td(off) tf Eoff Rth(j-s) 5 0.37 nF 1600 nC 1 Ω 64 ns 62 ns 4.4 mJ 486 ns 60 ns 7.4 mJ 0.28 K/W GB © by SEMIKRON Rev. 1 – 11.03.2015 1 SKiiP 26GB07E3V1 Characteristics Symbol Conditions Inverse - Diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 chiplevel rF MiniSKiiP® 2 Dual IRRM Qrr Err Rth(j-s) SKiiP 26GB07E3V1 chiplevel min. typ. max. Unit Tj = 25 °C 1.4 1.8 V Tj = 150 °C 1.4 1.8 V Tj = 25 °C 1 1.2 V Tj = 150 °C 0.9 1 V Tj = 25 °C 1.8 2.6 mΩ 2.7 3.9 mΩ Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 3754 A/µs T = 150 °C j VGE = -8 V T j = 150 °C VCC = 300 V per Diode, λpaste=0.8 W/K*m 20.6 µC 4.5 mJ 0.35 K/W 20 LCE to heat sink w • 650V Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 • NTC T-Sensor A Module Ms Features 190 nH 2 2.5 Nm 50 g 493 ± 5% Ω 3420 K Temperature Sensor R100 Tc=100°C (R25=5 kΩ) B25/85 R(T)=R25*exp[B25/85*(1/T-1/298)], [T]=K Remarks • Max. case temperature limited to TC= 125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) GB 2 Rev. 1 – 11.03.2015 © by SEMIKRON SKiiP 26GB07E3V1 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 11.03.2015 3 SKiiP 26GB07E3V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 11.03.2015 © by SEMIKRON SKiiP 26GB07E3V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 11.03.2015 5