SKiiP 02NAC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP® 0 ICRM VGES Tj IF • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Tj = 175 °C V 6 A Ts = 70 °C 6 A Ts = 25 °C 6 A Ts = 70 °C ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) • Temperature sensor: No basic insulation to main circuit, max. potential difference 850V to -DC A A 12 A -20 ... 20 V 10 µs -40 ... 175 °C 1200 V Ts = 25 °C 7.5 A Ts = 70 °C 7.5 A Ts = 25 °C 7.5 A Ts = 70 °C 7.5 A Tj = 150 °C IF Tj = 25 °C Tj = 150 °C Tj = 175 °C IFnom IFRM IFRM = 3 x IFnom IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj Remarks 6 4 Inverse - Diode VRRM Features Tj = 150 °C 1200 Ts = 25 °C ICnom tpsc SKiiP 02NAC12T4V1 Tj = 25 °C 4 A 12 A 36 A -40 ... 175 °C Rectifier - Diode VRRM Tj = 25 °C IF Ts = 25 °C, Tj = 150 °C I2t V 39 A 8 A tp = 10 ms sin 180° Tj = 25 °C 220 A Tj = 150 °C 200 A tp = 10 ms sin 180° Tj = 25 °C 242 A2s Tj = 150 °C 200 A2s -40 ... 150 °C -40 ... 125 °C 2500 V IFnom IFSM 1600 Tj Module It(RMS) Tterminal = 80 °C, 20 A per spring A Tstg Visol AC sinus 50 Hz, 1 min Characteristics Symbol Conditions Inverter - IGBT IC = 4 A VCE(sat) VGE = 15 V chiplevel VCE0 chiplevel rCE VGE(th) ICES Cies Coes NAC © by SEMIKRON Cres VGE = 15 V chiplevel min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 263 300 mΩ Tj = 150 °C 388 413 mΩ 5.8 6.5 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 0.25 nF f = 1 MHz 0.03 nF f = 1 MHz 0.02 nF VGE = VCE V, IC = 1 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V 5 mA Rev. 4 – 03.11.2014 1 SKiiP 02NAC12T4V1 Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT QG - 8 V...+ 15 V 23 RGint Tj = 25 °C 0 VCC = 600 V IC = 4 A RG on = 150 Ω RG off = 150 Ω Tj = 150 °C Ω td(on) 65 ns Tj = 150 °C 45 ns Tj = 150 °C 0.66 mJ Tj = 150 °C 300 ns Tj = 150 °C 110 ns Tj = 150 °C 0.37 mJ 2.49 K/W tr Eon MiniSKiiP® 0 SKiiP 02NAC12T4V1 Features • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 td(off) tf Eoff VGE = +15/-15 V Rth(j-s) per IGBT, λpaste=0.8 W/K*m Inverse - Diode VF = VEC IF = 4 A VGE = 0 V chiplevel VF0 chiplevel rF IRRM Qrr Err Rth(j-s) chiplevel nC Tj = 25 °C 1.8 2.1 V Tj = 150 °C 1.6 1.9 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 129 144 mΩ 181 198 mΩ Tj = 150 °C IF = 4 A Tj = 150 °C VGE = -15 V Tj = 150 °C VCC = 600 V di/dtoff = 110 A/µs Tj = 150 °C per Diode, λpaste=0.8 W/K*m 3.4 A 0.95 µC 0.34 mJ 2.53 K/W Rectifier - Diode Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) • Temperature sensor: No basic insulation to main circuit, max. potential difference 850V to -DC VF = VEC VF0 rF Rth(j-s) IF = 8 A chiplevel chiplevel chiplevel Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 0.9 1 V Tj = 125 °C 0.7 0.8 V Tj = 25 °C 15 29 mΩ Tj = 125 °C 21 34 per Diode, λpaste=0.8 W/K*m 1.5 mΩ K/W Module Ms to heat sink 2 w 2.5 Nm 20 g 1670 ± 3% Ω Temperature Sensor R100 Tr = 100 °C, tolerance = 3 % 2 R(T) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C) ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 NAC 2 Rev. 4 – 03.11.2014 © by SEMIKRON SKiiP 02NAC12T4V1 Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 4 – 03.11.2014 3 SKiiP 02NAC12T4V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic 4 Rev. 4 – 03.11.2014 © by SEMIKRON SKiiP 02NAC12T4V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 4 – 03.11.2014 5