6087

NTE6087
Dual Schottky Barrier Silicon Rectifier
45V, 30 Amp, TO220 Type Package
Features:
D Schottky Barrier Chip
D Guard Ring for Transient Protection
D Low Forward Voltage Drop
D Low Power loss, High Efficiency
D High Surge Current Capability
D Guaranteed Reverse Avalanche
Maximum Ratings an Electrical Characteristics: (TA = +25C unless otherwise specified. Single
phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Average Rectified Output Current (TC = +100C), IO
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Non−Repetitive Peak Surge Current, IFSM
(8.3ms Single Half Sine−Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . . . . 200A
Forward Voltage (Per Diode, IF = 15A), VFM
TJ = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.62V
TJ = +125C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.57V
Peak Reverse Current (VR = 45V), IRM
TJ = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0mA
TJ = +125C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Typical Junction capacitance (Note 1), CJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750pF
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Maximum Thermal Resistance, Junction−to−Ambient (Per Diode Leg), RthJA . . . . . . . . . . . 50C/W
Maximum Thermal Resistance, Junction−to−Case (Per Diode Leg), RthJC . . . . . . . . . . . . . 1.5C/W
Note 1. Measured at 1.0MHz and applied voltage of 4.0VDC.
Rev. 11−14
Pin1
Pin2, Case
Pin3
.147 (3.75) Dia Max
.185 (4.7)
.054 (1.38)
.392
(9.95)
.110 (2.79)
.245 (6.22)
.269
(6.83)
Max
K
.6.08
(15.42)
Max
.040
(1.02)
A
K
A
.500
(12.7)
Min
.100 (2.54)
.018 (0.48)