NTE585

NTE585
Schottky Barrier Diode
DO−41 Type Package
Features:
D Schottky Barrier Chip
D Guard Ring for Transient and ESD Protection
D Surge Overload Rating to 25A Peak
D Lower Power Loss, High Efficiency
D Ideally Suited for Use in High Frequency SMPS, Inverters ans As Free Wheeling Diodes
Maximum Ratings and Electrical Characteristics: (TA = +25C unless otherwise specified. Single
phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Maximum Peak Repetitive Reverse Current, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Maximum Recurrent Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Maximum DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Maximum RMS Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28V
Maximum Average Forward Rectified Current (TL = +90C, Note1), IO . . . . . . . . . . . . . . . . . . . . 1.0A
Peak Forward Surge Current, IFSM
(8.3ms single half sine−wave superimposed on rated load) . . . . . . . . . . . . . . . . . . . . . . . . 25A
Maximum Forward Voltage, VFM
at 1.0A DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6V
at 3.1A DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9V
Maximum Peak Reverse Current at Rated DC Blocking Voltage, IRM
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0mA
TA = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Typical Junction Capacitance (Note 2), CJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110pF
Typical Thermal Resistance, Junction−to−Ambient (Note 3), RthJA . . . . . . . . . . . . . . . . . . . . 50C/W
Typical Thermal Resistance, Junction−to−Lead (Note 3), RthJL . . . . . . . . . . . . . . . . . . . . . . . 15C/W
Operating Junction Temperature Range TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +125C
Storage Temperature Range Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Note 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
Note 2. Measured at 1MHz and applied reverse voltage of 4.0 Volts.
Note 3. Vertical PCB mounting with 9.5mn lead on 38 x 38mm copper pad.
1.100
(27.94)
Min
.210
(5.33)
Max
.034 (0.87) Dia Max
Color Band Denotes Cathode
.107 (2.72)
Dia Max
Rev. 3−15