NTE646 Schottky Barrier Silicon Rectifier Low Voltage, High

NTE646
Schottky Barrier Silicon Rectifier
Low Voltage, High Frequency
DO−201AD Type Package
Features:
D Schottky Barrier Chip
D Guard Ring for Transient Protection
D Surge Overload Rating to 80A Peak
D Low Power Loss, High Efficiency
Maximum Ratings and Electrical Characteristics: (TA = +25C unless otherwise specified. Single
Phase, Half Wave, 60Hz, Resistive or Inductive load. For capacitive load, derate current by 20%)
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Average Rectified Output Current (Note 1), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Non−Repetitive Peak Forward Surge Current, IFSM
(8.3ms Single Half Sine−Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . . 80A
Forward Voltage (IF = 3A), VFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.85V
Peak Reverse Current (At Rated DC Blocking Voltage), IRM
TJ = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5mA
TJ = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Typical Junction Capacitance (Note 2), Cj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140pF
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance (Note 3)
Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28C/W
Junction−to−Lead, RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10C/W
Note 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case..
Note 2. Measured at 1MHz and applied reverse voltage of 4VDC.
Note 3. Vertical PCB mounting with 12.7mm lead length on 63.5 x 63.5mm copper pad.
1.000 (25.4)
Min
.374 (9.5)
Max
.051 (1.3) Dia Max
Color Band Denotes Cathode
.208 (5.3) Dia Max