NTE6090 Silicon Dual Power Rectifier 45V, 30 Amp TO−3P Type Package Features: D Schottky Barrier Chip D Guard Ring for Transient Protection D Low Forward Voltage Drop D Low Power Loss, High Efficiency D High Surge Current Capability Maximum Ratings and Electrical Characteristics: (TA = +255C unless otherwise specified. Single Phase, half−wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%) Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V Average Rectified Output Current (TC = +1005C), IO Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Non−Repetitive Peak Forward Surge Current, IFSM (8.3ms Single Half Sine−Wave Surge Superimposed on Rated Load) . . . . . . . . . . . . . . 250A Forward Voltage Drop (Per Diode, IF = 15A), VFM TJ = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55V TJ = +1255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.50V Peak Reverse Current (VR = 45V), IRM TJ = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0mA TJ = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Typical Junction Capacitance (Note 1), CJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750pF Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Peak Surge Junction Temperature (Forward Current Applied), TJ(pk) . . . . . . . . . . . . . . . . . . . +1755C Thermal Resistance, Junction−to−Case (Per Diode), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . 1.45C/W Thermal Resistance, Junction−to−Ambient (Per Diode), RthJA . . . . . . . . . . . . . . . . . . . . . . . . 405C/W Note 1. Measured at 1MHz and applied reverse voltage of 4.0V DC. Rev. 7−14 TO3P Type Package .638 (16.2) Max .197 (5.0) .906 (23.0) Max K .217 (5.5) .480 (12.2) .130 (3.3) Dia .748 (19.0) Min A K A .215 (5.47)