199

NTE199
Silicon NPN Transistor
Low Noise, High Gain Amplifier
Description:
The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Steady State Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Total Power Dissipation (TA = +55°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL . . . . . . . . . . . . . . . . . +260°C
Note 1. Determined from power limitations due to saturation voltages at this current
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCB = 50V
–
–
30
nA
VCB = 50V, TA = +100°C
–
–
10
µA
Static Characteristics
Collector Cutoff Current
ICBO
Collector Cutoff Current
ICES
VCB = 50V
–
–
30
nA
Emitter Cutoff Current
IEBO
VEB = 5V
–
–
50
nA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
400
–
800
–
300
–
Unit
Static Characteristics (Cont’d)
Forward Current Transfer Ratio
hFE
VCE = 5V, IC = 2mA
VCE = 5V, IC = 100µA, Note 2
Breakdown Voltage
Collector–to–Emitter
V(BR)CEO IC = 10mA, Note 3
50
–
–
V
Breakdown Voltage
Collector–to–Base
V(BR)CBO IC = 10µA
70
–
–
V
Breakdown Voltage
Emitter–to–Base
V(BR)EBO IE = 10µA
5
–
–
V
Collector Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1mA, Note 3
–
–
0.125
V
Base Saturation Voltage
VBE(sat)
IC = 10mA, IB = 1mA, Note 3
–
–
0.78
V
Base Emitter ON Voltage
VBE(on)
VCE = 10V, IC = 2mA
0.5
–
0.9
V
400
–
1200
Dynamic Characteristics
Forward Current Transfer Ratio
hfe
VCE = 5V, IC = 2mA, f = 1kHz
Output Capacitance,
Common Base
Ccb
VCB = 10V, IE = 0, f = 1kHz
–
–
4
pF
Noise Figure
NF
IC = 100µA, VCE = 5V,
Rg = 5kΩ, f = 1kHz
–
–
3
dB
Note 2. Typically, a minimum of 95% of the distribution is above this value.
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max