NTE3043 Optoisolator NPN Transistor Output Description: The NTE3043 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 4–Lead DIP type package. Features: D High Output Voltage: V(BR)CEO = 80V D Controlled Current Transfer Ratio D Maximum Specified Switching Times D High Isolation Voltage D Low Cost DIP Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Input LED DC Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (1µs p.w. 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A DC Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mW/°C Output Transistor Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C Coupled Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Input LED Reverse Leakage Current IR VR = 3V – – 10 µA Forward Voltage VF IF = 20mA – – 1.5 V Reverse Breakdown Voltage VR IR = 10µA 3.0 – – V – –1.8 – mV/°C VF = 0, f = 1MHz – 50 – pF VF = 1V, f = 1MHz – 65 – pF Forward Voltage Temperature Coefficient Junction Capacitance CJ Output Transistor Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IF = 0 80 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IF = 0 5 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA 100 – – V nA Collector–Emitter Dark Current ICEO VCE = 10V, IF = 0 – – 60 DC Current Gain hFE VCE = 6V, IC = 100µA – 170 – Collector–Emitter Capacitance VCE = 0, f = 1MHz – 8 – pF Collector–Base Capacitance VCE = 5V, f = 1MHz – 20 – pF Emitter–Base Capacitance VEB = 0, f = 1MHz – 10 – pF IF = 10mA, VCE = 10V 70 125 210 % IF = 16mA, VCE = 0.4V – 12.5 – % IF = 10mA, VCB = 10V – 0.15 – % VISO = 500VDC 10 – – Ω IF = 16mA, IC = 2mA – – 0.4 V f = 1MHz – 0.5 – pF Relative Humidity < 50%, I1–0 < 10µb 4000 – – VDC t = 1sec 3000 – – VAC Relative Humidity < 50% 3500 – – VDC t = 1min 2500 – – VAC – 4.5 15 µs – 3.5 15 µs – 3.2 – µs – 50 – µs Coupled DC Current Transfer Ratio IC/IF Current Transfer Ratio, Collector–Base Input–Output Isolation Resistance Collector–Emitter Saturation Voltage Input–Output Capacitance RIO VCE(sat) CIO Surge Isolation Steady State Isolation Switching Times Non–Saturated Turn–On Time ton Non–Saturated Turn–Off Time toff Saturated Turn–On Time ton Saturated Turn–Off Time toff RL = 100, IC = 200mA, VCC = 5V RL = 1.9kΩ, IF = 16mA Pin Connection Diagram Anode 1 6 Base Cathode 2 5 Collector N.C. 3 4 Emitter 6 5 4 .260 (6.6) Max 1 2 3 .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .085 (2.16) Max .300 (7.62) .350 (8.89) Max .100 (2.54)