NTE2645 Silicon PNP Transistor General Purpose Amp Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation, PT TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.71mW/°C TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W Derate linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 175 − − V OFF Characteristics Collector−Emitter Breakdown Current V(BR)CEO IC = 10mA Collector−Base Cutoff Current ICBO VCB = 100V − − 100 nA Emitter−Base Cutoff Current IEBO VEB = 3V − − 50 nA VEB = 5V − − 10 µA ICEO VCE = 100V − − 10 µA hFE VCE = 10V 55 − − IC = 1.0mA 90 − − IC = 10mA 100 − − IC = 50mA 100 − 300 IC = 150mA 60 − − IC = 10mA, IB = 1.0mA − − 0.3 V IC = 50mA, IB = 5.0mA − − 0.6 V IC = 10mA, IB = 1.0mA − − 0.8 V IC = 50mA, IB = 5.0mA 0.65 − 0.9 V Collector−Emitter Cutoff Current ON Characteristics (Note 1) Forward−Current Transfer Ratio Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. IC = 0.1mA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit |hfe| IC = 30mA, VCE = 30V, f = 100MHz 2.0 − 5.8 hfe IC = 10mA, VCE = 10V, f = 1.0kHz 80 − 320 Small−Signal Short−Circuit Input Impedance hje IC = 10mA, VCE = 10V, f = 1.0kHz 200 − 1200 Ω Small−Signal Open−Circuit Output Admittance hoe IC = 10mA, VCE = 10V, f = 1.0kHz − − 200 µs Output Capacitance Cobo VCB = 20V, IE = 0, 100kHz ≤ f ≤ 1.0MHz − − 10 pF Input Capacitance Cibo VEB = 1.0V, IC = 0, 100kHz ≤ f ≤ 1.0MHz − − 75 pF Noise Figure NF f = 100Hz − − 5.0 dB f = 1.0kHz − − 3.0 dB f = 10kHz − − 3.0 dB Dynmic Characteristics Forward Current Transfer Ratio .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector 45° .031 (.793)