2SD2537 Transistors Medium Power Transistor (25V, 1.2A) 2SD2537 zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) zDimensions (Unit : mm) 2SD2537 2.5 4.0 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 12 V 1.2 A (DC) Collector current IC Collector power dissipation PC 0.5 2 W W Junction temperature Tj 150 °C Tstg −55 to +150 °C Storage temperature (2) (3) 0.5 0.4 Collector-base voltage ∗1 Single pulse Pw=100ms 1.5 1.0 (1) Parameter 0.5 4.5 1.6 1.5 ROHM : MPT3 EIAJ : SC-62 0.4 0.4 1.5 (1) Base (2) Collector (3) Emitter 3.0 A (Pulse) ∗1 2 ∗2 ∗2 When mounted on a 40×40×0.7mm ceramic board. zPackaging specifications and hFE Type 2SD2537 Package hFE Marking Code Basic ordering unit (pieces) MPT3 V DV T100 1000 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 30 − − V Collector-emitter breakdown voltage BVCEO 25 − − V Emitter-base breakdown voltage BVEBO 12 − V IE=10µA ICBO − − − 0.3 µA VCB=30V µA V V IC/IB=500mA/10mA IC/IB=0.5A/10mA Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage IEBO − − 0.3 VCE(sat) VBE(sat) − − − − 0.3 1.2 hFE 820 fT − − 200 1800 Transition frequency − − MHz Output capacitance Cob − 20 − pF DC current transfer ratio Conditions IC=10µA IC=1mA VEB=12V ∗ VCE/IC=5V/0.5A VCE=10V, IE=−50mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz ∗Measured using pulse current. Rev.C 1/3 2SD2537 Transistors zElectrical characteristics curves 1.4µA 1.2µA 1.0µA 0.8 0.8µA 0.6µA 0.4 0.4µA 0.2µA 0.3 0 0 0.1 0.2 1.2 1.5mA 0.8 1.0mA 0.5mA 0.4 IB=0 0.4 0.5 0 10000 VCE=10V 1000 1V 500 5V 3V 200 100 50 VCE=5V Pulsed 5000 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE Fig.2 Ground emitter output characteristics ( Ta=25°C Pulsed 2000 Ta=100°C 25°C 2000 1000 −25°C 500 200 100 50 20 20 10 10 2 5 10 20 50 100 200 2 500 1000 2000 5 1000 IC/IB=50 Pulsed 500 200 100 50 Ta=100°C 25°C 20 −25°C 10 5 2 1 2 5 10 20 50 100 200 500 1000 2000 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 10 20 50 100 200 500 1000 2000 Fig.5 DC current gain vs. collector current ( BASE SATURATION VOLTAGE : VBE(sat) (mV) Fig.4 DC current gain vs. collector current ( ) 200 100 50 20 10 5 2 0 10000 1000 500 100 200 100 50 20 10 2 5 10 20 50 100 200 0.6 0.8 1.0 1.2 1.4 Fig.3 Ground emitter propagation characteristics ) ) IC/IB=10 50 2000 0.4 1000 Ta=25°C Pulsed 500 200 100 50 IC/IB=100 20 50 10 10 5 2 1 2 5 10 20 50 100 200 500 1000 2000 COLLECTOR CURRENT : IC (mA) Ta=25°C Pulsed 5000 0.2 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) 0.2 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics( ) 5000 0.1 Ta=25°C Pulsed 0.4 0.5 IB=0 0.3 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10000 2.0mA COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) 1.2 1.6 VCE=5V Pulsed 1000 25°C 1.6µA 4.0mA 4.5mA 5.0mA 2.5mA 500 1000 2000 COLLECTOR CURRENT : IC (mA) Fig.8 Base-emitter saturation voltage vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) BASE SATURATION VOLTAGE : VBE(sat) (mV) 1.6 A 3.0m Ta=10 0°C −25°C 1.8µA 2000 A 3.5m 2.0µA COLLECTOR CURRENT : IC (mA) 2.0 Ta=25°C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 2.0 10000 IC/IB=50 Pulsed 5000 Ta= −25°C 50 2000 1000 500 100 200 100 50 20 10 2 5 10 20 50 100 200 500 1000 2000 COLLECTOR CURRENT : IC (mA) Fig.9 Base-emitter saturation voltage vs. collector current ( ) Rev.C 2/3 2SD2537 VCE=10V Ta=25°C Pulsed 5000 2000 1000 500 200 100 50 20 10 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) Transistors 1000 f=1MHz IE=0A Ta=25°C 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.11 Collector output capacitance vs. collector-base voltage Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1