2SD1468S Transistors Muting Transistor (15V, 1A) 2SD1468S zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.08V at Ic / IB = 500mA / 500µA. 2) Ideal for low voltage, high current drives. 3) High DC current gain and high current. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3) (1)Emitter (2)Collector Taping specifications (3)Base zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol Limits Unit VCBO VCES 30 15 V V VEBO IC 5 1 V A PC Tj 0.3 150 Tstg −55 to +150 W °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 30 15 5 − − − − − − V V V IC=50µA IC=1mA IE=50µA ICBO − − 0.5 µA IEBO VCE(sat) − − − 0.08 0.5 0.4 µA V VCB=20V VEB=4V IC/IB=0.5mA/50mA DC current transfer ratio hFE 120 − 560 − Transition frequency fT 50 150 − MHz Output capacitance Cob − 15 30 pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Conditions VCE/IC=3V/0.1A VCE=5V , IE= −50mA , f=100MHz VCE=10V , IE=0A , f=1MHz zPackaging specifications and hFE Type 2SD1468S Package hFE SPT QRS Code Basic ordering unit (pieces) TP 5000 Rev.A 1/3 2SD1834 Transistors zElectrical characteristics curves 100µA 40 80µA 30 60µA 20 40µA 20µA 10 1000 Ta=25°C 500 VCE=10V 100 50 20 10 5 2 200 400 Ta=25°C 800 1000 600 2000 1000 500 200 100 50 IC/IB=50/1 20 10 20/1 5 10/1 2 1 1 2 5 10 20 50 100 200 500 1000 10000 0.2 100 50 20 10 5 2 1 2 5 10 20 50 0.6 0.8 50 1 1.0 2 1000 Ta=25°C 500 200 100 50 IC=100mA 20 10 IC=50mA 5 IC=10mA 2 1 IC=5mA 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 2 5 10 20 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage 10 20 50 100 200 500 1000 Fig.3 DC current gain vs. collector current Ta=25°C VCE=5V 1000 500 200 100 50 20 10 5 2 1 0.5 1 5 COLLECTOR CURRENT : IC (mA) 50 100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current Ta=25°C IC=0A f=1MHz 100 100 50 20 10 5 2 Ta=25°C 50 ON RESISTANCE : Ron(Ω) 200 0.5 VCE=1V 100 Fig.5 Collector-emitter saturation voltage vs. base current EMITTER INPUT CAPACITANCE : Cib(pF) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Ta=25°C IE=0A f=1MHz 1 0.1 0.2 VCE=3V 200 BASE CURRENT : IB(mA) Fig.4 Collector-emitter saturation voltage vs. collector current 500 0.4 Fig.2 Ground emitter propagation characteristics COLLECTOR CURRENT : IC (mA) 1000 500 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(saT) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta=25°C 1000 10 0 Fig.1 Ground emitter output characteristics 5000 2000 20 1 COLLECTOR TO EMITTER VOLTAGE : VCE (mV) 10000 Ta=25°C 5000 200 IB=0µA 0 0 10000 DC CURRENT GAIN : hFE 120µA TRANSITION FREQUENCY : fT (MHz) 140µA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 50 20 10 5 2 1 0.5 0.2 1 0.1 0.2 0.5 1 2 5 10 20 50 EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Emitter input capacitance vs. emitter-base voltage 100 0.1 10 20 50 100 200 500 1000 2000 5000 10000 BASE CURRENT : IB (mA) Fig.9 "ON" resistance vs. base current characteristics Rev.A 2/3 2SD1834 Transistors R(1kΩ) input Vi 1kHz 100mVrms IB X V Ron= v0 vi−v0 output v0 ×RL Fig.10 "ON" resistance measurement circuit Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1