WFF7N65L Product Description
Silicon N-Channel MOSFET
Features
D
�
7A,650V,RDS(on)(Max1.38Ω)@VGS=10V
�
Low Crss (typical 15pF )
�
Fast Switching Capability
�
100%Avalanche Tested
�
Isolation Voltage (VISO=4000V AC)
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power
MOSFET
is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche
characteristics .This devices is specially wellsuited
half bridge and
full bridge resonant
ballast, high efficiency switched
topology line a electronic
for
lamp
mode power supplies, active power
factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
650
V
Continuous Drain Current(@Tc=25℃)
7
A
Continuous Drain Current(@Tc=100℃)
4.6
A
28
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
712
mJ
IAR
Avalanche Current
(Note1)
12.5
mJ
EAR
Repetitive Avalanche Energy
(Note1)
14
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
41
W
0.31
W/℃
-55~150
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
3.2
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F120-Rev.A0 Dec.2015(B0)
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WFF7N65L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Silicon N-Channel MOSFET
Gate-source breakdown voltage
Drain cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=650V,VGS=0V
-
-
10
µA
VDS=520V,Tc=125℃
-
-
100
µA
650
-
-
V
ID=250 µA,Referenced to 25℃
-
0.65
-
V/℃
IDSS
Drain -source breakdown voltage
V(BR)DSS
Breakdown Voltage temperature Coefficient
∆BVDSS/∆TJ
ID=250 µA,VGS=0V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=3.75A
-
1.0
1.38
Ω
Forward Transconductance
gfs
VDS=40V,ID=3.75A
-
5.6
-
S
Input capacitance
Ciss
VDS=25V,
-
1621
1885
Reverse transfer capacitance
Crss
VGS=0V,
-
15
20
Output capacitance
Coss
f=1MHz
-
126
172
VDD=300V,
-
35
80
ID=7A
-
12
30
RG=25Ω
-
40
91
-
47
95
-
32
42
-
6
-
-
15
-
Turn-on Rise time
tr
Turn-on delay time
td(on)
pF
Switching time
ns
Turn-off Fall time
tf
Turn-off delay time
(Note4,5)
td(off)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=7A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
7
A
Pulse drain reverse current
IDRP
-
-
-
28
A
Forward voltage(diode)
VDSF
IDR=7A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=7A,VGS=0V,
-
346
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
3.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=25mH IAS=7A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤7.5A,di/dt≤300A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF7N65L Product Description
Silicon N-Channel MOSFET
VG S
15V
10V
8V
7V
6 .5 V
6V
5 .5 V
B ot t om 5 V
To p
10
10
2 5 °C
Silicon N-Channel MOSFET
I D[A]
I D[A]
1 5 0 °C
1
Note:
1.250µs pulse test
2 .Tc =2 5 °C
1
Note:
1.250µs pulse test
2.VD S =40V
0 .1
1
2
10
4
6
VD S [V]
8
10
V G S [V]
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
1 .4 0
1 .3 5
10
V G S =10V
1 .2 5
I DR [A]
R DS(on) [Ω ]
1 .3 0
1 .2 0
2 5 °C
V G S =20V
1 .1 5
1
1 .1 0
1 5 0 °C
Notes:
1.250µs pulse test
2.VG S =0V
1 .0 5
N o t e : Tj = 2 5° C
1 .0 0
0 .9 5
0 .1
0
2
4
6
8
10
0 .4
0 .5
0 .6
0 .7
0 .8
0 .9
I D [A]
1 .0
1 .1
1 .2
1 .3
1 .4
1 .5
VS D [V]
Fig.3 On-Resistance Variation vs
Drain Current and Gate Voltage
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
2000
VD S =480V
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
C rss= C gd
C is s
1200
C o ss
800
Note:
1.V G S =0V
2.f= 1M Hz
C rss
400
0
10
-1
10
0
10
V GS Gate Source Voltage[V]
Ca pa cit anc e[ pF ]
1600
V D S =300V
10
V D S =120V
8
6
4
2
0
1
0
2
4
VD S [V]
Fig.5 Capacitance Characteristics
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8
10
12
14
16
18
20
Qg Toltal Gate Charge[nC]
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Fig.6 Gate Charge Characteristics
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WFF7N65L Product Description
Silicon N-Channel MOSFET
1 .2
3 .0
BV DS (Normalixed)
2 .5
1 .1
R DS(on) (Normalized)
Silicon N-Channel MOSFET
1 .0
0 .9
Notes:
1.VG S =0V
2.I D=250µA
0 .8
-7 5
-5 0
-2 5
0
25
50
75
100
125
2 .0
1 .5
0 .5
Notes:
1.VG S =10V
2.I D=3.5A
0 .5
0 .0
-7 5
150
-5 0
-2 5
0
25
50
75
100
125
150
TJ [°C]
T J [°C]
Fig.7 Breakdown Voltage Variation
vs. Temperature
Fig.8 On-Resistance Variation
vs. Temperature
8
102
Operation in This Area
is limited by R D S (o n )
10
100µs
1
6
1ms
10ms
100
10
ID[A ]
I D [A]
1 0 0 ms
DC
-1
4
2
Notes: 。
1 . T c=25 C
2.T J=150 。
C
3.Single pulse
10
-2
100
101
102
0
25
103
50
75
125
150
Tc[°C]
VD S [V]
Fig.9 Maximum Safe Operation Area
ZθJC (t),Thermal Response
100
Fig.10 Maximum Drain Current vs
Case Temperature
D = 0 .5
100
0 .2
* N o te ：
0 .1
1.Z θ J C (t)=0.85 C/W Max.
2.Duty Factor,D=t1/t2
3.T JM-T C=P DM* Z θJ C (t)
。
0 .0 5
10
-1
0 .0 2
PD M
0 .0 1
t1
t2
Single pulse
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1 [sec]
Fig.11 Transient Thermal Response Curve
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WFF7N65L Product Description
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test Circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFF7N65L Product Description
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
Sam e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
Gate Pulse Width
Gate Pulse Period
D =
(Driver)
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF7N65L Product Description
Silicon N-Channel MOSFET
TO220F Package Dimension
Silicon N-Channel MOSFET
U n it:m m
E
符 号
Symbol
M IN
M AX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
e
L
B
b
C
2.54TYPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
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e
A
e
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WFF7N65L Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
Silicon N-Channel
MOSFET
2.Please
do not exceed
the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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