WFP8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) D G S General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited half bridge and full bridge resonant ballast, high efficiency switched topology line a electronic for lamp mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 600 V Continuous Drain Current(@Tc=25℃) 7.5 A Continuous Drain Current(@Tc=100℃) 4.3 A 30 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 590 mJ IAR Avalanche Current (Note1) 7 mJ EAR Repetitive Avalanche Energy (Note1) 14 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns Total Power Dissipation(@Tc=25℃) 142 W Derating Factor above 25℃ 1.14 W/℃ -55~150 ℃ 300 ℃ PD TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Value Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 0.88 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W WT-F052-Rev.A0 Oct.2013 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 1008 WFP8N60B Product Description Silicon N-Channel MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Drain cut -off current Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=600V,VGS=0V - - 10 µA VDS=480V,Tc=125℃ - - 100 µA 600 - - V ID=250 µA,Referenced to 25℃ - 0.65 - V/℃ IDSS Drain -source breakdown voltage V(BR)DSS Breakdown Voltage temperature Coefficient ∆BVDSS/∆TJ ID=250 µA,VGS=0V Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=3.75A - 1.0 1.2 Ω Forward Transconductance gfs VDS=40V,ID=3.75A - 6.2 - S Input capacitance Ciss VDS=25V, - 1120 1350 Reverse transfer capacitance Crss VGS=0V, - 23 30 Output capacitance Coss f=1MHz - 115 150 VDD=300V, - 80 170 Turn-on Rise time tr Turn-on delay time ton ID=7.5A - 30 70 tf RG=25Ω - 60 110 - 125 260 - 25 35 - 6 - - 10 - Min Type pF Switching time ns Turn-off Fall time Turn-off delay time (Note4,5) toff Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=7.5A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Max Unit Continuous drain reverse current IDR - - - 7.5 A Pulse drain reverse current IDRP - - - 30 A Forward voltage(diode) VDSF IDR=7.5A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=7.5A,VGS=0V, - 315 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 2.6 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=19.5mH IAS=7.5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤7.5A,di/dt≤300A/us,VDD<BVDSS,Starting TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/8 WFP8N60B Product Description Silicon N-Channel MOSFET VG S 15V 10V 8V 7V 6 .5 V 6V 5 .5 V B ot t om 5 V To p 10 10 2 5 °C I D[A] I D[A] 1 5 0 °C 1 Note: 1.250µs pulse test 2 .Tc =2 5 °C 1 Note: 1.250µs pulse test 2.VD S =40V 0 .1 1 2 10 4 6 VD S [V] 8 10 V G S [V] Fig.1 On Region Characteristics Fig.2 Transfer Characteristics 1 .4 0 1 .3 5 10 V G S =10V 1 .2 5 I DR [A] R DS(on) [Ω ] 1 .3 0 1 .2 0 2 5 °C V G S =20V 1 .1 5 1 1 .1 0 1 5 0 °C Notes: 1.250µs pulse test 2.VG S =0V 1 .0 5 N o t e : Tj = 2 5° C 1 .0 0 0 .9 5 0 .1 0 2 4 6 8 10 0 .4 0 .5 0 .6 0 .7 0 .8 0 .9 I D [A] 1 .0 1 .1 1 .2 1 .3 1 .4 1 .5 VS D [V] 0Fig.3 On-Resistance Variation vs Drain Current and Gate Voltage Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature 12 2000 VD S =480V Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd C rss= C gd C is s 1200 C o ss 800 Note: 1.V G S =0V 2.f= 1M Hz C rss 400 0 10 -1 10 0 10 V GS Gate Source Vol tage[V] Ca pa cit anc e[ pF ] 1600 V D S =300V 10 V D S =120V 8 6 4 2 0 1 0 2 4 VD S [V] Fig.5 Capacitance Characteristics WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I 6 8 10 12 14 16 18 20 Qg Toltal Gate Charge[nC] M ICROELECTRON ICS Tel : +86-755-8250 6288 Fig.6 Gate Charge Characteristics WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/8 WFP8N60B Product Description Silicon N-Channel MOSFET 1 .2 3 .0 1 .1 R DS(on) (Normalized) BV DS (Normalixed) 2 .5 1 .0 0 .9 Notes: 1.VG S =0V 2.I D=250µA 0 .8 -7 5 -5 0 -2 5 0 25 50 75 100 125 2 .0 1 .5 0 .5 Notes: 1.VG S =10V 2.I D=3.5A 0 .5 0 .0 -7 5 150 -5 0 -2 5 0 25 50 75 100 125 150 TJ [°C] T J [°C] Fig.7 Breakdown Voltage Variation vs. Temperature Fig.8 On-Resistance Variation vs. Temperature 8 102 Operation in This Area is limited by R D S (o n ) 100µs 101 6 1ms 10ms 10 0 ID[A ] I D[A] 1 0 0 ms DC 1 0 -1 4 2 Notes: 。 1 . T c=25 C 2.T J=150 。 C 3.Single pulse 1 0 -2 0 10 101 102 0 25 103 50 75 125 150 Tc[°C] VD S [V] Fig.9 Maximum Safe Operation Area ZθJC (t),Thermal Response 100 Fig.10 Maximum Drain Current vs Case Temperature D = 0 .5 100 0 .2 * N o te : 0 .1 1.Z θ J C (t)=0.85 C/W Max. 2.Duty Factor,D=t1/t2 3.T JM-T C=P DM* Z θJ C (t) 。 0 .0 5 10 -1 0 .0 2 PD M 0 .0 1 t1 t2 Single pulse 1 0 -2 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 100 101 t1 [sec] Fig.11 Transient Thermal Response Curve WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/8 WFP8N60B Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.12 Gate Test Circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.13 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.14 Unclamped Inductive Switching Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/8 WFP8N60B Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG Sam e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S Gate Pulse Width Gate Pulse Period D = (Driver) 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/8 WFP8N60B Product Description Silicon N-Channel MOSFET TO-220C Package Dimension U n It:m m E A 7 Q F D2 D P L L2 B 符 号 M IN MAX A 4 .3 0 4 .7 0 B 1 .1 0 1 .4 0 b 0 .7 0 0 .9 5 c 0 .4 0 0 .6 5 d 1 5 .2 1 6 .2 D2 9 .0 0 9 .4 0 E 9 .7 0 1 0 .1 0 e 2 .3 9 2 .6 9 F 1 .2 5 1 .4 0 L 1 2 .6 0 1 3 .6 0 L2 2 .8 0 3 .2 0 Q 2 .6 0 3 .0 0 Q1 2 .2 0 2 .6 0 P 3 .5 0 3 .8 0 b c Q1 e WIN SEM I e M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 7/8 WFP8N60B Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 8/8