SANGDEST MICROELECTRONICS 12SQ045 Technical Data Data Sheet N0005, Rev. A Green Products 12SQ045 SCHOTTKY BARRIER RECTIFIER Applications： z z z z z DC-DC converters AC adapter High frequency rectification circuit Bypass diodes Photovoltaic Solar cell Protection Schottky Rectifier Features: z z z z z Super-high speed & low noise switching Low voltage drop This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches/ mm R-6 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 12SQ045 Technical Data Data Sheet N0005, Rev. A Green Products Marking Diagram: Where XXXXX is YYWWL 12 S Q 045 SSG YY WW L = Forward Current (12A) = Package Type = Device Type = Reverse Voltage (45V) = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package R-6 (Pb-Free) 12SQ045 Shipping 500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Rating: Characteristics Repetitive Peak Reverse Voltage Max. average forward current Surge(Non-repetitive) Forward Current Symbol VRRM Conditions - Value Unit 45 V IF(AV) R- load, Ta=25℃ 12 A IFSM 8.3ms single half sine-wave 275 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 12SQ045 Technical Data Data Sheet N0005, Rev. A Green Products Electrical Characteristics（Ta=25℃ Unless otherwise specified） Characteristics Peak Forward Voltage Peak Reverse Current Thermal Resistance(Typical) Symbol VFM IRRM1 IRRM2 R θJ-c R θJ-L Conditions IFM=12.0A,Ta=25℃ Ta=25℃ VRM=VRRM Ta=100℃ Between junction and case Between junction and lead Max. 0.55 0.5 20 3.0 2.0 Unit V mA ℃/W Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature at reduced reverse voltage at reduced reverse voltage in DC forward mode Max. Storage Temperature Approximate Weight Case Style Symbol TJ Tstg wt Condition Specification VR≤80%VRRM VR≤50%VRRM -55 to +150 -55 to +180 -55 to +200 -55 to +150 2.24 - Units °C °C g R-6 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 12SQ045 Technical Data Data Sheet N0005, Rev. A Green Products 100 TJ=125℃ 1000 Reverse Current (MA) 10 TJ=25℃ 100 1 0.1 TJ=25℃ 0.01 0.001 0 5 10 15 20 25 30 35 40 10 15 20 Reverse Voltage-VR(V) 25 30 35 Reverse Voltage (%) Fig.1-Typical Junction Capacitance Instantaneous Forward Current(A) Junction Capacitance-CT(PF) 10000 Fig.2-Typical Reverse Characteristics 100 10 TJ=25℃ 1 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 40 45 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0005, Rev. A 12SQ045 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •