12SQ030 thru 12SQ100 Naina Semiconductor Ltd. Schottky Barrier Rectifier, 12.0 A Features • • • • • • Mechanical Data Diffused junction Low cost Low reverse leakage current High surge current capability & low forward voltage drop Polarity: Color Band denotes Cathode High efficiency • Case: JEDEC R-6 molded plastic • Polarity: Color band denotes cathode • Weight: 2.1 grams • Mounting position: Any Thermal Specifications (TC = 25oC unless otherwise specified) Parameters Maximum operating junction temperature range Maximum storage temperature range Typical thermal resistance junction to case Symbol TJ TSTG RθJC Values -55 to +200 -55 to +200 3.0 Units o C o C o C/W JEDEC R-6 Electrical Characteristics (TC = 25oC unless otherwise specified) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Symbol 12SQ030 12SQ035 12SQ040 12SQ045 12SQ050 12SQ060 12SQ080 12SQ100 Units VRRM 30 35 40 45 50 60 80 100 V VRMS 21 24.5 28 31.5 35 42 56 70 V 45 50 60 80 100 V Maximum DC blocking VDC 30 35 40 voltage Maximum average forward output current @ IF(AV) TC = 950C Peak forward surge current (8.3ms) single half IFSM sine-wave superimposed on rated load Forward voltage drop @ VF 0.55 12A DC (Note 1) Typical junction CJ capacitance (Note 2) TA = Maximum DC 250C reverse current IR at rated DC TA = 0 blocking voltage 100 C NOTES: (1) 300 µs, pulse width, 2% duty cycle (2) Measured at 1.0 MHz and reverse voltage of 4.0 VDC. 1 12 A 275 A 0.7 0.8 450 V pF 0.5 mA 50 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com Naina Semiconductor Ltd. 12SQ030 thru 12SQ100 Package Outlines R-6 Dimensions in inches and (millimeters) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com