CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors 94 8638 • Package matches with detector BPW16N • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC DESCRIPTION CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens. APPLICATIONS • Radiation source in near infrared range PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) 1.5 ± 55 950 800 CQY36N Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE CQY36N PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 V Forward current IF 100 mA tp 100 μs Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number: 81001 Rev. 1.8, 16-May-11 UNIT IFSM 2 A PV 160 mW Tj 100 °C Tamb - 25 to + 85 °C °C Tstg - 25 to + 100 t3s Tsd 245 °C leads not soldered RthJA 450 K/W For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CQY36N Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 450 K/W 80 60 40 100 80 60 RthJA = 450 K/W 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21319 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21320 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage SYMBOL MIN. TYP. MAX. 1.6 IF = 50 mA, tp 20 ms VF 1.3 IF = 100 mA TKVF - 1.3 Temperature coefficient of VF Breakdown voltage UNIT V mV/K IR = 100 μA V(BR) VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 50 mA, tp 20 ms Ie Radiant power IF = 50 mA, tp 20 ms e 10 mW IF = 50 mA TKe - 0.8 %/K ± 55 deg Junction capacitance Temperature coefficient of e Angle of half intensity 5 μA 50 0.7 pF 1.5 2.1 mW/sr Peak wavelength IF = 50 mA p 950 nm Spectral bandwidth IF = 50 mA 50 nm IF = 100 mA tr 800 ns IF = 1.5 A, tp/T = 0.01, tp 10 μs tr 400 ns d 1.2 mm Rise time Virtual source diameter BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.2 VF rel - Relative Forward Voltage (V) I F - Forward Current (mA) 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 IF = 10 mA 1.0 0.9 0.8 0.7 0 1 2 3 4 V F - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage www.vishay.com 2 1.1 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81001 Rev. 1.8, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CQY36N Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 1.25 Φe rel - Relative Radiant Power 100 I e – Radiant Intensity (mW/sr) Vishay Semiconductors 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 100 101 102 103 I F – Forward Current (mA) 94 7917 0 900 104 94 7994 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength I e rel – Relative Radiant Intensity 0° Φ e - Radiant Power (mW) 100 10 1 1000 950 λ - Wavelength (nm) 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 1 10 100 1000 I F - Forward Current (mA) 13718 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7919 Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 0.4 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81001 Rev. 1.8, 16-May-11 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.544-5053.01-4 Issue: 1; 01.07.96 96 12189 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81001 Rev. 1.8, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000