CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 55° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors 94 8638 • Package matches with detector BPW16N • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens. with APPLICATIONS • Radiation source in near infrared range PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 1.5 ± 55 950 800 CQY36N Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾ CQY36N Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 V Forward current IF 100 mA tp ≤ 100 µs Surge forward current Power dissipation Junction temperature Operating temperature range Thermal resistance junction/ambient IFSM 2 A PV 160 mW Tj 100 °C Tamb - 25 to + 85 °C °C Tstg - 25 to + 100 t≤3s Tsd 245 °C leads not soldered RthJA 450 K/W Storage temperature range Soldering temperature UNIT Note Tamb = 25 °C, unless otherwise specified www.vishay.com 78 For technical questions, contact: [email protected] Document Number: 81001 Rev. 1.7, 04-Sep-08 CQY36N Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 450 K/W 80 60 40 20 100 80 60 RthJA = 450 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 0 100 0 Tamb - Ambient Temperature (°C) 21319 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21320 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 50 mA, tp ≤ 20 ms VF 1.3 1.6 IF = 100 mA TKVF - 1.3 IR = 100 µA V(BR) VR = 0 V, f = 1 MHz, E = 0 Cj Forward voltage Temperature coefficient of VF Breakdown voltage Junction capacitance MIN. UNIT V mV/K 5 µA 50 pF Radiant intensity IF = 50 mA, tp ≤ 20 ms Ie Radiant power IF = 50 mA, tp ≤ 20 ms φe 10 mW IF = 50 mA TKφe - 0.8 %/K ϕ ± 55 deg Peak wavelength IF = 50 mA λp 950 nm Spectral bandwidth IF = 50 mA Δλ 50 nm IF = 100 mA tr 800 ns IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs tr 400 ns d 1.2 mm Temperature coefficient of φe Angle of half intensity Rise time Virtual source diameter 0.7 1.5 7.5 mW/sr Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.2 VF rel - Relative Forward Voltage (V) I F - Forward Current (mA) 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 1 2 3 V F - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Document Number: 81001 Rev. 1.7, 04-Sep-08 0 4 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 79 CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 1.25 Φe rel - Relative Radiant Power I e – Radiant Intensity (mW/sr) 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 100 101 102 103 I F – Forward Current (mA) 94 7917 0 900 104 94 7994 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength I e rel – Relative Radiant Intensity 0° Φ e - Radiant Power (mW) 100 10 1 1000 950 λ - Wavelength (nm) 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 1 10 100 1000 I F - Forward Current (mA) 13718 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7919 Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 0.4 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 80 For technical questions, contact: [email protected] Document Number: 81001 Rev. 1.7, 04-Sep-08 CQY36N Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs PACKAGE DIMENSIONS in millimeters 96 12189 Document Number: 81001 Rev. 1.7, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 81 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1