CQY36N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature (T–¾) Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics. The diode is case compatible to the BPW16N phototransistor, allowing the user to assemble his own optical interrupters. Features D D D D D Suitable for pulse operation Standard T–¾ flat miniature package 94 8638 Wide angle of half intensity ϕ = ± 55° Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81001 Rev. 2, 20-May-99 Test Conditions tp t x 100 ms x3s Symbol VR IF IFSM PV Tj Tstg Tsd RthJA Value 5 100 2 170 100 –25...+100 245 450 Unit V mA A mW °C °C °C K/W www.vishay.de • FaxBack +1-408-970-5600 1 (5) CQY36N Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Test Conditions IF = 50 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA x x x Symbol VF V(BR) Cj Ie Typ 1.3 tr 50 1.5 10 –0.8 ±55 950 50 400 Unit V V pF mW/sr mW %/K deg nm nm ns tf 450 ns 0.7 fe lp Dl x x Max 1.6 5 TKfe ϕ IF = 50 mA IF = 50 mA IF = 1.5 A, tp/T = 0.01, tp 10 ms IF = 1.5 A, tp/T = 0.01, tp 10 ms Fall Time Min Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 250 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) 0 94 7916 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81001 Rev. 2, 20-May-99 CQY36N Vishay Telefunken 104 Fe – Radiant Power ( mW ) IF – Forward Current ( mA ) 100.0 103 102 101 100 1.0 0.1 10–1 0 1 2 4 3 VF – Forward Voltage ( V ) 94 7996 e 1 100 1000 Figure 6. Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 I e rel ; Fe rel IF = 10 mA 1.0 IF = 20 mA 0.8 0.9 0.4 0.8 0.7 0 20 40 60 80 0 –10 0 10 100 Tamb – Ambient Temperature ( °C ) 94 7990 e 50 100 140 Tamb – Ambient Temperature ( °C ) 94 7993 e Figure 4. Relative Forward Voltage vs. Ambient Temperature Figure 7. Rel. Radiant Intensity\Power vs. Ambient Temperature 1.25 Fe rel – Relative Radiant Power 100 I e – Radiant Intensity ( mW/sr ) 10 IF – Forward Current ( mA ) 13718 Figure 3. Forward Current vs. Forward Voltage V Frel – Relative Forward Voltage 10.0 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 0.1 100 94 7917 e 101 102 103 IF – Forward Current ( mA ) 104 Figure 5. Radiant Intensity vs. Forward Current Document Number 81001 Rev. 2, 20-May-99 94 7994 e 950 1000 l – Wavelength ( nm ) Figure 8. Relative Radiant Power vs. Wavelength www.vishay.de • FaxBack +1-408-970-5600 3 (5) CQY36N Vishay Telefunken I e rel – Relative Radiant Intensity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7919 e Figure 9. Relative Radiant Intensity vs. Angular Displacement Dimensions in mm 96 12189 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 81001 Rev. 2, 20-May-99 CQY36N Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81001 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)