TSHA6500 Datasheet

TSHA6500
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity:  = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
94 8389
• Compliant to RoHS Directive
accordance to WEEE 2002/96/EC
200/95/EC
and
in
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
The TSHA6500 is an infrared, 875 nm emitting diode in
GaAlAs technology, molded in a clear, untinted plastic
package.
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
P (nm)
tr (ns)
30
± 24
875
600
TSHA6500
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSHA6500
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
VR
5
V
Forward current
IF
100
mA
mA
PARAMETER
TEST CONDITION
UNIT
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
Surge forward current
tp = 100 μs
IFSM
2.5
A
PV
180
mW
Power dissipation
Junction temperature
Operating temperature range
Thermal resistance junction/ambient
Rev. 2.1, 24-Aug-11
100
°C
- 40 to + 85
°C
°C
Tstg
- 40 to + 100
t  5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
Storage temperature range
Soldering temperature
Tj
Tamb
Document Number: 81022
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHA6500
www.vishay.com
Vishay Semiconductors
200
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
10
21142
20
30
40
50
60
70 80
0
90 100
0
Tamb - Ambient Temperature (°C)
21143
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e
TEST CONDITION
SYMBOL
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
MIN.
1.5
1.8
V
IF = 1 A, tp = 100 μs
VF
2.8
3.5
V
IF = 100 mA
TKVF
- 1.6
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
16
30
128
240
mV/K
100
μA
48
mW/sr
20
pF
IF = 1 A, tp = 100 μs
Ie
IF = 100 mA, tp = 20 ms
e
24
mW
IF = 20 mA
TKe
- 0.7
%/K

± 24
deg
nm
Angle of half intensity
mW/sr
Peak wavelength
IF = 100 mA
p
875
Spectral bandwidth
IF = 100 mA

80
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.2
nm/K
IF = 100 mA
tr
600
ns
IF = 1 A
tr
300
ns
IF = 100 mA
tf
600
ns
IF = 1 A
tf
300
ns
d
2.2
mm
Rise time
Fall time
Virtual source diameter
Rev. 2.1, 24-Aug-11
Document Number: 81022
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHA6500
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (A)
10 1
I FSM = 2.5 A (single pause)
t p /T= 0.01
10 0
0.05
0.1
0.2
0.5
10 -1
10 -2
94 8003
100
101
102
103
IF - Forward Current (mA)
948746-1
104
Fig. 5 - Radiant Intensity vs. Forward Current
1000
Φe - Radiant Power (mW)
IF - Forward Current (mA)
TSHA 6500
10 2
10 4
tp = 100 µs
tp/T= 0.001
10 3
10 2
100
10
1
0.1
0
1
2
3
4
V F - Forward Voltage (V)
94 8005
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
94 8015 e
Fig. 3 - Forward Current vs. Forward Voltage
10 4
Fig. 6 - Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
IF = 10 mA
I e rel; Φe rel
VF rel - Relative Forward Voltage (V)
10
1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
Fig. 2 - Pulse Forward Current vs. Pulse Duration
10 1
100
1.0
0.9
I F = 20 mA
0.8
0.4
0.8
0.7
0
94 7990
20
40
60
80
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Rev. 2.1, 24-Aug-11
0
- 10 0 10
100
94 8020
50
100
140
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81022
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHA6500
www.vishay.com
Vishay Semiconductors
0°
I e rel - Relative Radiant Intensity
Φ e - Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
I F = 100 mA
Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p )
0
780
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
980
880
0.6
λ - Wavelenght (nm)
94 8000
10°
0.4
0.2
0
0.2
0.4
0.6
94 8016 e
Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
Ø 5.8 ± 0.15
C
R2.49 (sphere)
(4.4)
35.2 ± 0.55
< 0.7
8.7 ± 0.3
7.7 ± 0.15
A
Area not plane
Ø 5 ± 0.15
1 min.
+ 0.2
0.6 - 0.1
+ 0.15
0.5 - 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5259.08-4
Issue: 3; 19.05.09
14436
Rev. 2.1, 24-Aug-11
Document Number: 81022
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000