236

NTE236
Silicon NPN Transistor
Final RF Power Output
(PO = 16W, 27MHz, SSB)
TO220AB
Description:
The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output
power class AB amplifier applications in the HF band.
Features:
D High Power Gain: Gpe ≥ 12dB, PO = 16W, f = 27MHz
D High Reliability
Application:
D 10 to 14 Watt Output Power Class AB Amplifier Applications in the HF band
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation, PC
TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7W
TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5°C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25°C/W
Rev. 12−10
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 5mA, IC = 0
5
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
60
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, RBE = ∞
25
−
−
V
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
−
−
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
−
−
0.1
mA
DC Forward Current Gain
hFE
VCE = 12V, IC = 10mA
90
−
180
−
Output Power
PO
VCC = 12V, Pin = 1W, f = 27MHz
16
18
−
W
Collector Efficiency
hC
VCC = 12V, Pin = 1W, f = 27MHz
60
70
−
%
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250
(6.35)
Max
.500
(12.7)
Min
.070 (1.78)
Max
Base
.100 (2.54)
Emitter
Collector/Tab