T410 T435 HIGH PERFORMANCE TRIACS .. .. FEATURES ITRMS = 4 A VDRM = 400 V to 800 V SENSITIVE GATE : IGT ≤ 10 mA HIGH COMMUTATION : (dI/dt)c > 3.5 A/ms A1 A2 G A1 A2 DESCRIPTION The T410 / T435 high voltage TRIAC Families are high performance planar diffused PNPN devices glass passivated technology. Packaged either in TO220AB, SOT82, SOT194 and ISOWATT220AB these products are intented for all bi-directional switch applications. SOT82 (Plastic) G A1 A2 TO220AB (Plastic) A1 A2 SOT194 (Plastic) G G ISOWAT T220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM March 1995 Parameter Value Unit 4 A tp = 8.3 ms 35 A tp = 10 ms 30 I2 t value tp = 10 ms 4.5 A2s Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 RMS on-state current (360° conduction angle) TO220AB SOT194/SOT82 Tc = 110 °C ISOWATT220AB Tc = 100 °C Non repetitive surge peak on-state current ( Tj initial = 25°C ) Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C T410 or T435 Unit -400 -600 -700 -800 400 600 700 800 V 1/7 T410 / T435 THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) Value Unit SOT82 / SOT194 100 °C/W TO220AB 60 ISOWATT 220AB 50 SOT82 / SOT194 TO220AB 3.5 ISOWATT 220AB 5.3 SOT82 / SOT194 TO220AB 2.6 ISOWATT 220AB 4 °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) VGM = 16 V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix T410 T435 10 35 IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=125°C I-II-III MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs ITM = 5.5A Tj=25°C I-II-III TYP 2 µs IL IG=1.2 IGT Tj=25°C I-II-III MAX 30 60 mA IH * IT= 100mA gate open Tj=25°C MAX 15 35 mA VTM * ITM = 5.5A tp= 380µs Tj=25°C MAX 1.75 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA Tj=125°C MAX 2 Tj=125°C MIN dV/dt * Rated Rated Linear slope up to VD=67%VDRM gate open VDRM = 400V / 600V 50 250 30 250 MIN 2.7 4.4 MIN 1.8 2.7 VDRM = 700V / 800V (dI/dt)c * dV/dt = 0.1V/µs Tj=125°C dV/dt = 20V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. 2/7 Unit mA V/µs A/ms T410 / T435 ORDERING INFORMATION T 4 10 - 800 T PACKAGES T = TO220AB D = SOT82 K = SOT194 W = ISOWATT220AB TRIAC PLANAR FAMILY ITRMS 4 A IGT 10 mA / 35 mA VDRM / VRRM 400V/600V/700V/800V Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (TO220AB / SOT82 / SOT 94). Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (ISOWATT220AB). Fig.4 : RMS on-state current versus case temperature. 3/7 T410 / T435 Fig.5 : Relative variation of thermal impedance versus pulse duration (SOT82 / SOT194 / TO220AB only). Fig.6 : Relative variation of thermal impedance versus pulse duration ( ISOWAT T220AB only). Zth/Rth Zth/Rth 1 1 Zth (j-c) Zt h( j-c) 0.1 0.1 Zt h( j-a) Zt h(j-a) 0.01 tp (s) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] 1E-3 1E-2 1E-1 1E +0 1E +1 1 E+2 5 E +2 Fig.8 : Non Repetitive surge peak on-state current versus number of cycles. Ih[Tj] o Ih[Tj=25 C] 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt Ih Tj(oC) -40 -20 0 20 40 60 80 100 120 140 Fig.9 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. 4/7 Fig.10 : On-state characteristics (maximum values). T410 / T435 PACKAGE MECHANICAL DATA TO220AB Plastic REF. A B C D E F G H I J K L M N N1 O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.0 10.4 0.393 0.409 15.2 15.9 0.598 0.626 13 14 0.511 0.551 6.2 6.6•• 0.244 0.260 16.4 typ. 0.645 typ. 3.5 4.2 0.137 0.165 2.65 2.95 0.104 0.116 4.4 4.6 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 1.27 typ. 0.050 typ. 0.49 0.70 0.019 0.027 2.4 2.72 0.094 0.107 4.95 5.15 0.194 0.203 2.40 2.70 0.094 0.106 1.14 1.70 0.044 0.067 0.61 0.88 0.024 0.034 Cooling Method : C Marking : Type number Weight : 2 g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. PACKAGE MECHANICAL DATA ISOWATT220AB Plastic REF. A B B1 C D E H I J L M N N1 O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10 10.4 0.393 0.409 15.9 16.4 0.626 0.645 9.8 10.6 0.385 0.417 28.6 30.6 1.126 1.204 16 typ 0.630 typ 9 9.3 0.354 0.366 4.4 4.6 0.173 0.181 3 3.2 0.118 0.126 2.5 2.7 0.098 0.106 0.4 0.7 0.015 0.027 2.5 2.75 0.098 0.108 4.95 5.2 0.195 0.204 2.4 2.7 0.094 0.106 1.15 1.7 0.045 0.067 0.75 1 0.030 0.039 Cooling Method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. 5/7 T410 / T435 PACKAGE MECHANICAL DATA SOT82 Plastic C REF. A B L Min. Max. Min. Max. 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 C 2.4 2.7 0.094 0.106 D 0.7 0.9 0.027 0.035 0.49 G 4.15 H (1) L 6/7 0.087 typ. 0.75 0.019 4.65 0.163 2.54 15.7 typ. 1.0 1.3 0.029 0.183 0.100 0.618 typ. 0.039 0.051 (1) Within this region the cross-section of the leads is uncontrolled D Marking : Type number Weight : 0.72g 2.2 typ. F M F Inches A E H M DIMENSIONS Millimeters E G T410 / T435 PACKAGE MECHANICAL DATA SOT194 Plastic REF. DIMENSIONS Millimeters C A B Min. Max. Min. Max. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 C 2.4 2.7 0.094 0.106 D 0.7 0.9 0.027 0.035 E L M O D F N E G I Inches 2.2 typ. 0.087 typ. F 0.49 0.75 0.019 0.020 G 4.15 4.65 0.163 0.183 I 1.3 typ. 0.051 typ. L 0.1 typ. 0.004 typ. M 4 typ 0.158 typ N 2 typ. 0.078 typ. O 6 typ. 0.236 typ. α 45° 45° Marking : Type number Weight : 0.68g FOOT PRINT 6.7 8.5 3.5 4.5 1.2 1 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7