NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz Application: D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Dissipation, PC TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7W TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5°C/W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Emitter–Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞ 25 – – V Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 100 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 100 µA DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180 – Output Power PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 – W Collector Efficiency hC VCC = 12V, Pin = 1W, f = 27MHz 60 70 – % Note 1. Pulse Test: Pulse Width = 150µs, Duty Cycle = 5%. .358 (9.1) .126 (3.2) .051 (1.3) .142 (3.62) Dia C .485 (12.32) .395 (9.05) B C E .189 (4.8) .485 (12.32) Min .100 (2.54) .019 (0.48) .177 (4.5) .347 (9.5) .122 (3.1)