HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. File Number Features • 27A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB (ALTERNATE VERSION) Formerly developmental type TA49173. E C G COLLECTOR (FLANGE) Ordering Information PART NUMBER 4411.2 PACKAGE BRAND HGTP12N60B3D TO-220AB 12N60B3D HGTG12N60B3D TO-247 12N60B3D HGT1S12N60B3DS TO-263AB 12N60B3D JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60B3DS9A. COLLECTOR (FLANGE) G Symbol E C JEDEC STYLE TO-247 E C G G E COLLECTOR (BOTTOM SIDE METAL) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 27 12 110 ±20 ±30 96A at 600V 104 0.83 100 -55 to 150 UNITS V A A A V V W W/oC mJ oC oC oC 300 260 5 10 µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = IC110 , VGE = 15V - - V - 250 µA TC = 150oC - - 2.0 mA TC = 25oC TC = 150oC - 1.6 2.1 V - 1.7 2.5 V 4.5 4.9 6.0 V IC = 250µA, VCE = VGE IGES VGE = ±20V TJ = 150oC, RG = 25Ω, VGE = 15V L = 100µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP - - ±250 nA 96 - - A IC = IC110 , VCE = 0.5 BVCES - 7.3 - V VGE = 15V - 51 60 nC VGE = 20V - 68 78 nC - 26 - ns On-State Gate Charge Qg(ON) IC = IC110 , VCE = 0.5 BVCES Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 19) trI Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF 2 UNITS - SSOA td(OFF)I MAX 600 Switching SOA Current Rise Time TYP TC = 25oC Gate to Emitter Leakage Current Current Turn-Off Delay Time MIN IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 19) - 23 - ns - 150 - ns - 62 - ns - 304 350 µJ - 250 350 µJ - 22 - ns - 23 - ns - 280 295 ns - 112 175 ns - 500 525 µJ - 660 800 µJ HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS IEC = 12A - 1.7 2.1 V IEC = 12A, dIEC/dt = 200A/µs - 32 40 ns IEC = 1.0A, dIEC/dt = 200A/µs - 23 30 ns IGBT - - 1.2 oC/W Diode - - 1.9 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified VGE = 15V 25 20 15 10 5 0 25 50 75 100 125 150 100 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH 90 80 70 60 50 40 30 20 10 0 0 TC , CASE TEMPERATURE (oC) 10 1 TC 75oC 75oC 110oC 110oC 100 VGE 15V 10V 15V 10V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 1.2oC/W, SEE NOTES 2 3 10 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 3 300 400 500 700 600 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 30 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 25Ω, L = 1mH, V CE = 480V 200 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 300 100 16 100 VCE = 360V, RG = 25Ω, TJ = 125oC 14 90 ISC 12 80 10 70 8 60 50 6 tSC 4 2 40 10 11 12 13 14 30 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ISC , PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 30 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Unless Otherwise Specified (Continued) 70 TC = -55oC 60 TC = 150oC 50 40 TC = 25oC 30 20 DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250µs 10 0 0 2 4 6 8 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 180 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 160 140 120 100 TC = 150oC 80 60 TC = 25oC 40 20 0 0 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 6 8 10 2.5 RG = 25Ω, L = 1mH, VCE = 480V 2.5 TJ = 25oC, TJ = 150oC, VGE = 10V 2.0 1.5 1.0 0.5 TJ = 25oC, TJ = 150oC, VGE = 15V 0 5 10 15 20 25 EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 4 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3.0 RG = 25Ω, L = 1mH, VCE = 480V 2.0 1.5 TJ = 150oC; VGE = 10V OR 15V 1.0 0.5 TJ = 25oC; VGE = 10V OR 15V 0 30 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 55 150 RG = 25Ω, L = 1mH, VCE = 480V RG = 25Ω, L = 1mH, VCE = 480V 50 125 T = 25oC, T = 150oC, V J J GE = 10V trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 2 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) 45 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 TJ = 25oC, TJ = 150oC, VGE = 15V 30 100 75 50 25 25 20 TC = -55oC TJ = 25oC and TJ = 150oC, VGE = 15V 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 4 30 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 30 HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Typical Performance Curves Unless Otherwise Specified (Continued) 140 RG = 25Ω, L = 1mH, VCE = 480V 275 130 250 120 225 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 300 TJ = 150oC, VGE = 10V, VGE = 15V 200 TJ = 25oC, VGE = 10V, VGE = 15V 175 110 90 80 125 70 5 10 15 20 25 TJ = 150oC, VGE = 10V, VGE = 15V 100 150 100 RG = 25Ω, L = 1mH, VCE = 480V 60 30 TJ = 25oC, VGE = 10V OR 15V 5 10 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) 15 TC = 25oC 140 120 100 TC = 150oC 80 60 40 20 0 5 6 7 8 9 10 11 12 13 14 Ig (REF) = 1mA, RL = 25Ω, TC = 25oC VCE = 600V 9 6 3 15 0 5 10 15 20 30 35 40 FIGURE 14. GATE CHARGE WAVEFORM 2.5 FREQUENCY = 1MHz CIES 2.0 1.5 1.0 COES 0.5 CRES 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 5 25 Qg , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC 0 VCE = 200V VCE = 400V VGE , GATE TO EMITTER VOLTAGE (V) 0 30 25 12 0 4 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT TC = -55oC DUTY CYCLE < 0.5%, VCE = 10V 160 PULSE DURATION = 250µs C, CAPACITANCE (nF) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 180 15 ICE , COLLECTOR TO EMITTER CURRENT (A) 45 50 HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.5 0.2 0.1 10-1 t1 0.05 PD 0.02 t2 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = PD x ZθJC x RθJC + TC SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 35 TC = 25oC, dIEC/dt = 200A/µs 30 tr, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 50 40 25oC 30 100oC 20 150oC 10 0 trr 25 ta 20 15 tb 10 5 0 0 0.5 1.0 1.5 2.0 2.5 VEC , FORWARD VOLTAGE (V) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 6 3.0 0 5 10 15 20 IEC , FORWARD CURRENT (A) FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Test Circuit and Waveform HGTP12N60B3D 90% 10% VGE EON EOFF L = 1mH VCE RG = 25Ω 90% + - ICE VDD = 480V 10% td(OFF)I trI tfI td(ON)I FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORM Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD is a Trademark of Emerson and Cumming, Inc.