INTERSIL HGT1S2N120CNDS

HGTP2N120CND, HGT1S2N120CNDS
Data Sheet
January 2000
13A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTP2N120CND and HGT1S2N120CNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49313. The Diode used is the development type TA49056
(Part number RHRD4120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• 13A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
E
Ordering Information
PACKAGE
4681.2
Features
Formerly Developmental Type TA49311.
PART NUMBER
File Number
COLLECTOR
(FLANGE)
BRAND
HGTP2N120CND
TO-220AB
2N120CND
HGT1S2N120CNDS
TO-263AB
2N120CND
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120CNDS9A.
JEDEC TO-263AB
Symbol
C
COLLECTOR
(FLANGE)
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
HGTP2N120CND, HGT1S2N120CNDS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTP2N120CND,
HGT1S2N120CNDS
UNITS
1200
V
13
7
20
±20
±30
13A at 1200V
104
0.83
-55 to 150
A
A
A
V
V
W
W/oC
oC
oC
300
260
8
oC
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 51Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BVCES
ICES
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
TC = 25oC
TC = 150oC
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 2.6A,
VGE = 15V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 45µA, VCE = VGE
Gate to Emitter Leakage Current
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 51Ω, VGE = 15V,
L = 5mH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
On-State Gate Charge
QG(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
2
MIN
TYP
MAX
UNITS
1200
-
-
V
-
-
100
µA
-
100
-
µA
-
-
1.0
mA
-
2.05
2.40
V
-
2.75
3.50
V
6.4
6.7
-
V
-
-
±250
nA
13
-
-
A
IC = 2.6A, VCE = 0.5 BVCES
-
10.2
-
V
IC = 2.6A,
VCE = 0.5 BVCES
VGE = 15V
-
30
36
nC
VGE = 20V
-
36
43
nC
-
25
30
ns
-
11
15
ns
-
205
220
ns
-
260
320
ns
-
425
590
µJ
-
355
390
µJ
-
21
25
ns
-
11
15
ns
-
225
240
ns
-
360
420
ns
-
800
1100
µJ
-
530
580
µJ
IGBT and Diode at TJ = 25oC,
ICE = 2.6A,
VCE = 0.8 BVCES ,
VGE = 15V,
RG = 51Ω,
L = 5mH
Test Circuit (Figure 20)
IGBT and Diode at TJ = 150oC,
ICE = 2.6A,
VCE = 0.8 BVCES ,
VGE = 15V,
RG = 51Ω,
L = 5mH
Test Circuit (Figure 20)
HGTP2N120CND, HGT1S2N120CNDS
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Diode Forward Voltage
TEST CONDITIONS
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
MIN
TYP
MAX
UNITS
IEC = 2.6A
-
1.8
2.0
V
IEC = 1A, dlEC/dt = 200A/µs
-
31
35
ns
IEC = 2.6A, dlEC/dt = 200A/µs
-
47
52
ns
IGBT
-
-
1.20
oC/W
Diode
-
-
2.5
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
VGE = 15V
12
10
8
6
4
2
0
25
50
75
100
125
150
16
TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH
14
12
10
8
6
4
2
0
0
TC , CASE TEMPERATURE (oC)
fMAX, OPERATING FREQUENCY (kHz)
200
TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH
TC
VGE
75oC 15V
75oC 12V
100
50
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
TC
VGE
(DUTY FACTOR = 50%)
110oC 15V
RØJC = 1.2oC/W, SEE NOTES
110oC 12V
10
1
2
3
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
3
1400
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
400
600
800
1000
1200
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
5
50
50
VCE = 840V, RG = 51Ω, TJ = 125oC
40
40
30
30
20
20
ISC
tSC
10
10
0
10
11
12
13
14
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
0
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
14
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTP2N120CND, HGT1S2N120CNDS
Unless Otherwise Specified (Continued)
10
8
TC = 25oC
6
TC = -55oC
4
TC = 150oC
2
DUTY CYCLE <0.5%, VGE = 12V
250µs PULSE TEST
0
0
1
3
2
4
5
6
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
10
DUTY CYCLE <0.5%, VGE = 15V
250µs PULSE TEST
8
TC = -55oC
6
TC = 150oC
4
2
0
0
1
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON , TURN-ON ENERGY LOSS (µJ)
4
5
900
RG = 51Ω, L = 5mH, VCE = 960V
TJ = 150oC, VGE = 12V, VGE = 15V
1000
500
TJ = 25oC, VGE = 12V, VGE = 15V
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
RG = 51Ω, L = 5mH, VCE = 960V
800
700
TJ = 150oC, VGE = 12V OR 15V
600
500
400
TJ = 25oC, VGE = 12V OR 15V
300
200
100
1.0
5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
40
45
RG = 51Ω, L = 5mH, VCE = 960V
RG = 51Ω, L = 5mH, VCE = 960V
35
trI , RISE TIME (ns)
40
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
20
15
1.0
3
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2000
tdI , TURN-ON DELAY TIME (ns)
2
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1500
TC = 25oC
TJ = 25oC, TJ = 150oC, VGE = 15V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
4
TJ = 25oC, TJ = 150oC, VGE = 15V
5
5.0
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
5.0
HGTP2N120CND, HGT1S2N120CNDS
Typical Performance Curves
Unless Otherwise Specified (Continued)
700
RG = 51Ω, L = 5mH, VCE = 960V
RG = 51Ω, L = 5mH, VCE = 960V
600
350
VGE = 12V, VGE = 15V, TJ = 150oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
400
300
250
200
500
TJ = 150oC, VGE = 12V OR 15V
400
300
200
150
TJ = 25oC, VGE = 12V OR 15V
VGE = 12V, VGE = 15V, TJ = 25oC
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
100
1.0
5.0
1.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
16
DUTY CYCLE <0.5%, VCE = 20V
250µs PULSE TEST
30
25
20
15
TC = -55oC
TC = 25oC
5
0
8
TC = 150oC
9
11
10
12
14
13
10
8
VCE = 400V VCE = 800V
6
4
2
0
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
C, CAPACITANCE (nF)
70
CIES
60
50
40
30
COES
10
CRES
0
20
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
15
20
25
30
FIGURE 14. GATE CHARGE WAVEFORMS
80
15
10
QG , GATE CHARGE (nC)
FREQUENCY = 1MHz
10
5.0
VCE = 1200V
15
90
5
4.5
12
FIGURE 13. TRANSFER CHARACTERISTIC
0
4.0
IG (REF) = 1mA, RL = 260Ω, TC = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
20
3.5
14
0
7
3.0
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
10
2.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
35
2.0
25
5
DUTY CYCLE <0.5%, TC = 110oC
250µs PULSE TEST
4
VGE = 15V
3
VGE = 10V
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTP2N120CND, HGT1S2N120CNDS
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
100
0.5
t1
0.2
PD
t2
0.1
10-1
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
20
70
10
60
TC = 25oC, dlEC / dt = 200A/µs
150oC
t, RECOVERY TIME (ns)
IF , FORWARD CURRENT (A)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
-55oC
1
25oC
50
trr
40
30
ta
20
tb
10
0.1
0.5
1.0
1.5
2.0
VF , FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
2.5
0
1
2
3
4
IF , FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
RHRD4120
90%
10%
VGE
EON
L = 5mH
EOFF
VCE
RG = 51Ω
90%
+
-
VDD = 960V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
6
FIGURE 21. SWITCHING TEST WAVEFORMS
5
HGTP2N120CND, HGT1S2N120CNDS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC .
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
7
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.