HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. File Number 4650.2 Features • 5.3A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com/ • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB E C G Formerly Developmental Type TA49314. COLLECTOR Ordering Information PART NUMBER (FLANGE) PACKAGE BRAND HGTP1N120BND TO-220AB 1N120BND HGT1S1N120BNDS TO-263AB 1N120BND NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A. JEDEC TO-263AB Symbol COLLECTOR (FLANGE) C G E G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 1 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a trademark of Analogy, Inc. HGTP1N120BND, HGT1S1N120BNDS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Rectified Forward Current at TC = 148oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC ALL TYPES UNITS 1200 V 5.3 2.7 4 6 ±20 ±30 6A at 1200V 60 0.476 -55 to 150 A A A A V V W W/oC oC 300 260 8 oC 13 µs oC µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage BVCES ICES VCE(SAT) IC = 250µA, VGE = 0V VCE = BVCES IC = 1.0A VGE = 15V MIN TYP MAX UNITS 1200 - - V TC = 25oC - - 250 µA TC = 125oC - 20 - µA TC = 150oC - - 1.0 mA TC = 25oC - 2.5 2.9 V TC = 150oC - 3.8 4.3 V 6.0 7.1 - V Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA Switching SOA SSOA TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH, VCE(PK) = 1200V 6 - - A VGEP Gate to Emitter Plateau Voltage VGE(TH) TEST CONDITIONS IC = 50µA, VCE = VGE IC = 1.0A, VCE = 0.5 BVCES - 9.2 - V On-State Gate Charge QG(ON) IC = 1.0A, VCE = 0.5 BVCES - 14 20 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 20) Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF 2 VGE = 15V VGE = 20V - 15 21 nC - 15 20 ns - 11 14 ns - 67 76 ns - 226 300 ns - 172 187 J - 90 123 J HGTP1N120BND, HGT1S1N120BNDS TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 1.0A VCE = 0.8 BVCES VGE = 15V RG = 82Ω MIN TYP MAX UNITS - 13 17 ns - 11 15 ns - 75 88 ns - 258 370 ns - 385 440 J - 120 175 J IEC = 1.0A - 1.3 1.8 V IEC = 1.0A, dIEC/dt = 200A/µs - - 50 ns IGBT - - 2.1 oC/W Diode - - 3 oC/W L = 4mH Test Circuit (Figure 20) NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses include losses due to diode recovery. Unless Otherwise Specified VGE = 15V 5 4 3 2 1 0 25 50 75 100 125 150 7 TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH 6 5 4 3 2 1 0 0 TC , CASE TEMPERATURE (oC) TJ = 150oC, RG = 82Ω, L = 4mH, VCE = 960V 100 10 TC 75oC 75oC 110oC 110oC VGE 15V 13V 15V 13V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 2.1oC/W, SEE NOTES 5 0.5 1.0 2.0 3.0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 3 600 800 1000 1200 1400 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) 200 400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 300 200 20 20 VCE = 840V, RG = 82, TJ = 125oC 18 18 tSC 16 16 14 14 ISC 12 10 13 13.5 12 14 14.5 10 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 6 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGTP1N120BND, HGT1S1N120BNDS Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 6 TC = 25oC 5 4 TC = -55oC TC = 150oC 3 2 1 0 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 13V 0 2 4 6 8 10 6 5 TC = 25oC 4 2 1 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 15V 0 0 2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 6 8 10 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1200 250 RG = 82Ω, L = 4mH, VCE = 960V 1000 EOFF, TURN-OFF ENERGY LOSS (µJ) EON , TURN-ON ENERGY LOSS (µJ) 4 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE TJ = 150oC, VGE = 13V TJ = 150oC, VGE = 15V 800 600 400 200 TJ = 25oC, VGE = 13V TJ = 25oC, VGE = 15V 0 0.5 1 1.5 2 2.5 RG = 82Ω, L = 4mH, VCE = 960V 200 TJ = 150oC, VGE = 13V OR 15V 150 TJ = 25oC, VGE = 13V OR 15V 100 50 0 0.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 24 28 RG = 82Ω, L = 4mH, VCE = 960V RG = 82Ω, L = 4mH, VCE = 960V 24 20 16 TJ trI , RISE TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) TC = 150oC TC = -55oC 3 VGE 25oC 150oC 13V 13V 25oC 15V 150oC 15V 12 8 0 1 1.5 2 2.5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 4 20 TJ = 25oC, TJ = 150oC, VGE = 13V 16 12 TJ = 25oC, TJ = 150oC, VGE = 15V 8 3 4 0.5 1 1.5 2 2.5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 3 HGTP1N120BND, HGT1S1N120BNDS 84 Unless Otherwise Specified (Continued) 360 RG = 82Ω, L = 4mH, VCE = 960V 80 76 72 TJ = 150oC, VGE = 13V TJ = 25oC, VGE = 15V 68 TJ = 25oC, VGE = 13V 64 280 200 0.5 1 1.5 2 2.5 VGE , GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) 10 8 TC = 25oC 6 TC = 150oC 4 2 0 7 8 9 11 10 12 13 14 9 6 3 IG(REF) = 1mA, RL = 600Ω, TC = 25oC 0 0 4 250 200 150 100 COES 50 CRES VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 5 25 ICE , COLLECTOR TO EMITTER CURRENT (A) C, CAPACITANCE (pF) CIES 20 12 16 20 FIGURE 14. GATE CHARGE WAVEFORMS 300 15 8 QG , GATE CHARGE (nC) FREQUENCY = 1MHz 10 VCE = 1200V VCE = 400V 15 350 5 3 12 FIGURE 13. TRANSFER CHARACTERISTIC 0 2.5 VCE = 800V VGE , GATE TO EMITTER VOLTAGE (V) 0 2 15 TC = -55oC 12 1.5 FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250µs 14 1 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 16 TJ = 25oC, VGE = 13V OR 15V 120 0.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) 18 TJ = 150oC, VGE = 13V OR 15V 240 160 60 56 RG = 82Ω, L = 4mH, VCE = 960V 320 TJ = 150oC, VGE = 15V tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) Typical Performance Curves 6 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, TC = 110oC 5 VGE = 15V 4 VGE = 12V 3 VGE = 10V 2 1 0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE HGTP1N120BND, HGT1S1N120BNDS ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 2.0 1.0 0.5 0.2 0.1 0.1 0.05 t1 0.02 0.01 PD t2 SINGLE PULSE DUTY DUTY FACTOR, FACTOR, D D == tt11 // tt22 PEAK PEAK TTJJ == (P (PD X ZZθJC XR RθJC TC DX θJC X θJC)) ++ T C 0.01 0.005 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 5 70 t, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = 25oC, dIEC/dt = 200A/µs 60 2 TC = 150oC TC = -55oC 1 0.5 TC = 25oC 0.2 50 trr 40 30 ta 20 tb 10 0.1 0 0.4 0.8 1.2 1.6 2.0 0 0.5 1 2 3 4 5 IEC , FORWARD CURRENT (A) VEC , FORWARD VOLTAGE (V) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveforms VGE 90% L = 4mH 10% RHRD4120 EON EOFF RG = 82Ω ICE ICE 90% + - VDD = 960V VCE 10% tfI td(ON)I trI td(OFF)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT 6 FIGURE 21. SWITCHING TEST WAVEFORMS HGTP1N120BND, HGT1S1N120BNDS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.