TSHG5210 Datasheet

TSHG5210
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
94 8390
DESCRIPTION
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength: p = 850 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:  = ± 10°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: fc = 18 MHz
Good spectral matching with CMOS cameras
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
TSHG5210
230
± 10
850
20
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSHG5210
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
Surge forward current
tp = 100 μs
IFSM
1
A
PV
180
mW
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance
junction/ambient
Rev. 1.3, 23-Aug-11
Tj
100
°C
Tamb
- 40 to + 85
°C
Tstg
- 40 to + 100
°C
t  5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
Document Number: 81810
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHG5210
www.vishay.com
Vishay Semiconductors
200
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
10
21142
20
30
40
50
60
70 80
0
90 100
0
Tamb - Ambient Temperature (°C)
21143
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
IF = 1 A, tp = 100 μs
VF
2.3
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
Reverse current
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
Forward voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e
MIN.
230
V
V
mV/K
10
μA
420
mW/sr
125
140
UNIT
pF
IF = 1 A, tp = 100 μs
Ie
2300
IF = 100 mA, tp = 20 ms
e
55
mW
IF = 100 mA
TKe
- 0.35
%/K

± 10
deg
Angle of half intensity
mW/sr
Peak wavelength
IF = 100 mA
p
Spectral bandwidth
IF = 100 mA

40
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA
tr
20
ns
Fall time
IF = 100 mA
tf
13
ns
IDC = 70 mA, IAC = 30 mA pp
fc
18
MHz
d
3.7
mm
Cut-off frequency
Virtual source diameter
Rev. 1.3, 23-Aug-11
820
850
880
nm
Document Number: 81810
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHG5210
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Tamb < 50 °C
tp/T = 0.01
1000
Radiant Power (mW)
IF - Forward Current (mA)
0.02
0.05
0.1
10
1
e-
0.2
100
0.5
100
0.01
0.1
0.1
1
10
100
tp - Pulse Duration (ms)
16031
1
1.25
Φe, rel - Relative Radiant Power
1000
100
tp = 100 µs
tp/T = 0.001
10
1.0
0.75
0.5
0.25
0
1
18873
1
3
2
VF - Forward Voltage (V)
4
800
Fig. 3 - Forward Current vs. Forward Voltage
850
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
Ie rel - Relative Radiant Intensity
10 000
1000
100
tP = 0.1 ms
tP/T = 0.001
10
900
λ- Wavelength (nm)
16972
10°
20°
30°
40°
1.0
50°
0.9
60°
0.8
70°
ϕ - Angular Displacement
0
Ie - Radiant Intensity (mW/sr)
1000
Fig. 5 - Radiant Power vs. Forward Current
Fig. 2 - Pulse Forward Current vs. Pulse Duration
IF - Forward Current (mA)
10
100
IF - Forward Current (mA)
16971
80°
0.7
1
1
21307
10
100
1000
Fig. 4 - Radiant Intensity vs. Forward Current
Rev. 1.3, 23-Aug-11
21111
0.6
0.4
0.2
0
IF - Forward Current (mA)
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81810
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHG5210
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
R 2.49 (sphere)
< 0.7
(4.7)
7.7 ± 0.15
8.7 ± 0.3
35.5 ± 0.55
12.5 ± 0.3
Ø 5.8 ± 0.15
A
Area not plane
1.1 ± 0.25
1 min.
Ø 5 ± 0.15
0.15
0.5 +- 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5258.02-4
Issue: 7; 23.07.10
95 10916
Rev. 1.3, 23-Aug-11
Document Number: 81810
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000